Findchips: Parametric Search Results for k4h510838

Parametric results for: k4h510838 under DRAMs

Select parts from the table below to compare.

Compare


Select Parts		Part Number

		K4H510838D-UIB3 Samsung Semiconductor
		K4H510838B-ZLCC Samsung Semiconductor
		K4H510838D-UCB00 Samsung Semiconductor
		K4H510838D-UCB3T Samsung Semiconductor
		K4H510838D-ZLB30 Samsung Semiconductor
		K4H510838B-TLAA Samsung Semiconductor
		K4H510838J-BLCC0 Samsung Semiconductor
		K4H510838D-ULB0T Samsung Semiconductor
		K4H510838J-LICCT Samsung Semiconductor
		K4H510838D-ZPB3T Samsung Semiconductor

				Most Relevant								Technical																		Compliance			Operating Conditions				Physical											Dimensions			Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Clock Frequency-Max (fCLK)	Refresh Cycles	Access Mode	Memory IC Type	Additional Feature	I/O Type	Interleaved Burst Length	Number of Functions	Number of Ports	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Self Refresh	Sequential Burst Length	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Package Description	Reach Compliance Code	ECCN Code	HTS Code	Part Package Code	Pin Count

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.5 V

700 ps

166 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

360 µA

CMOS

AUTOMOTIVE

R-PDSO-G66

Not Qualified

125 °C

-40 °C

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

MATTE TIN

GULL WING

635 µm

DUAL

SAMSUNG SEMICONDUCTOR INC

TSSOP, TSSOP66,.46

compliant

EAR99

8542.32.00.28

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.6 V

650 ps

200 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

430 µA

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

PLASTIC/EPOXY

BGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

BGA, BGA60,9X12,40/32

unknown

EAR99

8542.32.00.28

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.5 V

600 ps

133 MHz

8192

FOUR BANK PAGE BURST

DDR1 DRAM

AUTO/SELF REFRESH

COMMON

2,4,8

64000000

67.1089 M

SYNCHRONOUS

3-STATE

YES

2,4,8

5 mA

325 µA

2.7 V

2.3 V

CMOS

COMMERCIAL

R-PDSO-G66

Not Qualified

70 °C

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

GULL WING

650 µm

DUAL

1.2 mm

22.22 mm

10.16 mm

SAMSUNG SEMICONDUCTOR INC

TSSOP, TSSOP66,.46

compliant

EAR99

8542.32.00.28

TSOP2

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.5 V

700 ps

166 MHz

8192

CACHE DRAM MODULE

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

360 µA

CMOS

COMMERCIAL

R-PDSO-G66

Not Qualified

70 °C

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

MATTE TIN

GULL WING

635 µm

DUAL

SAMSUNG SEMICONDUCTOR INC

TSSOP, TSSOP66,.46

compliant

EAR99

8542.32.00.28

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.5 V

700 ps

FOUR BANK PAGE BURST

DDR1 DRAM

AUTO/SELF REFRESH

64000000

67.1089 M

SYNCHRONOUS

YES

2.7 V

2.3 V

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

YES

TIN SILVER COPPER

BALL

1 mm

BOTTOM

1.2 mm

12 mm

10 mm

SAMSUNG SEMICONDUCTOR INC

TBGA,

compliant

EAR99

8542.32.00.28

BGA

Check for Price

Obsolete

536.8709 Mbit

64MX8

2.5 V

750 ps

133 MHz

8192

FOUR BANK PAGE BURST

DDR1 DRAM

AUTO/SELF REFRESH

COMMON

2,4,8

64000000

67.1089 M

SYNCHRONOUS

3-STATE

YES

2,4,8

5 mA

2.7 V

2.3 V

CMOS

COMMERCIAL

R-PDSO-G66

Not Qualified

70 °C

PLASTIC/EPOXY

TSOP2

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

YES

TIN LEAD

GULL WING

650 µm

DUAL

1.2 mm

22.22 mm

10.16 mm

SAMSUNG SEMICONDUCTOR INC

TSOP2, TSSOP66,.46

compliant

EAR99

8542.32.00.28

TSOP2

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.5 V

650 ps

200 MHz

8192

FOUR BANK PAGE BURST

DDR1 DRAM

AUTO/SELF REFRESH

COMMON

2,4,8

64000000

67.1089 M

SYNCHRONOUS

3-STATE

YES

2,4,8

5 mA

200 µA

2.7 V

2.3 V

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

260

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

YES

BALL

1 mm

BOTTOM

1.2 mm

12 mm

9 mm

SAMSUNG SEMICONDUCTOR INC

TBGA, BGA60,9X12,40/32

compliant

EAR99

8542.32.00.28

BGA

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.5 V

750 ps

133 MHz

8192

CACHE DRAM MODULE

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

325 µA

CMOS

COMMERCIAL

R-PDSO-G66

Not Qualified

70 °C

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

MATTE TIN

GULL WING

635 µm

DUAL

SAMSUNG SEMICONDUCTOR INC

TSSOP, TSSOP66,.46

compliant

EAR99

8542.32.00.28

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.5 V

650 ps

200 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

200 µA

CMOS

INDUSTRIAL

R-PDSO-G66

Not Qualified

85 °C

-40 °C

260

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

MATTE TIN

GULL WING

635 µm

DUAL

SAMSUNG SEMICONDUCTOR INC

TSSOP, TSSOP66,.46

compliant

EAR99

8542.32.00.28

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.5 V

700 ps

166 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

360 µA

CMOS

AUTOMOTIVE

R-PBGA-B60

Not Qualified

125 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

BGA, BGA60,9X12,40/32

compliant

EAR99

8542.32.00.28

1 2 3 4 5 Next

Compare

K4H510838D-UIB3

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.5 V

700 ps

166 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

360 µA

CMOS

AUTOMOTIVE

R-PDSO-G66

Not Qualified

125 °C

-40 °C

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

MATTE TIN

GULL WING

635 µm

DUAL

SAMSUNG SEMICONDUCTOR INC

TSSOP, TSSOP66,.46

compliant

EAR99

8542.32.00.28

K4H510838B-ZLCC

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.6 V

650 ps

200 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

430 µA

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

PLASTIC/EPOXY

BGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

BGA, BGA60,9X12,40/32

unknown

EAR99

8542.32.00.28

K4H510838D-UCB00

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.5 V

600 ps

133 MHz

8192

FOUR BANK PAGE BURST

DDR1 DRAM

AUTO/SELF REFRESH

COMMON

2,4,8

64000000

67.1089 M

SYNCHRONOUS

3-STATE

YES

2,4,8

5 mA

325 µA

2.7 V

2.3 V

CMOS

COMMERCIAL

R-PDSO-G66

Not Qualified

70 °C

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

GULL WING

650 µm

DUAL

1.2 mm

22.22 mm

10.16 mm

SAMSUNG SEMICONDUCTOR INC

TSSOP, TSSOP66,.46

compliant

EAR99

8542.32.00.28

TSOP2

K4H510838D-UCB3T

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.5 V

700 ps

166 MHz

8192

CACHE DRAM MODULE

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

360 µA

CMOS

COMMERCIAL

R-PDSO-G66

Not Qualified

70 °C

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

MATTE TIN

GULL WING

635 µm

DUAL

SAMSUNG SEMICONDUCTOR INC

TSSOP, TSSOP66,.46

compliant

EAR99

8542.32.00.28

K4H510838D-ZLB30

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.5 V

700 ps

FOUR BANK PAGE BURST

DDR1 DRAM

AUTO/SELF REFRESH

64000000

67.1089 M

SYNCHRONOUS

YES

2.7 V

2.3 V

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

YES

TIN SILVER COPPER

BALL

1 mm

BOTTOM

1.2 mm

12 mm

10 mm

SAMSUNG SEMICONDUCTOR INC

TBGA,

compliant

EAR99

8542.32.00.28

BGA

K4H510838B-TLAA

Samsung Semiconductor

Check for Price

Obsolete

536.8709 Mbit

64MX8

2.5 V

750 ps

133 MHz

8192

FOUR BANK PAGE BURST

DDR1 DRAM

AUTO/SELF REFRESH

COMMON

2,4,8

64000000

67.1089 M

SYNCHRONOUS

3-STATE

YES

2,4,8

5 mA

2.7 V

2.3 V

CMOS

COMMERCIAL

R-PDSO-G66

Not Qualified

70 °C

PLASTIC/EPOXY

TSOP2

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

YES

TIN LEAD

GULL WING

650 µm

DUAL

1.2 mm

22.22 mm

10.16 mm

SAMSUNG SEMICONDUCTOR INC

TSOP2, TSSOP66,.46

compliant

EAR99

8542.32.00.28

TSOP2

K4H510838J-BLCC0

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.5 V

650 ps

200 MHz

8192

FOUR BANK PAGE BURST

DDR1 DRAM

AUTO/SELF REFRESH

COMMON

2,4,8

64000000

67.1089 M

SYNCHRONOUS

3-STATE

YES

2,4,8

5 mA

200 µA

2.7 V

2.3 V

CMOS

COMMERCIAL

R-PBGA-B60

Not Qualified

70 °C

260

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

YES

BALL

1 mm

BOTTOM

1.2 mm

12 mm

9 mm

SAMSUNG SEMICONDUCTOR INC

TBGA, BGA60,9X12,40/32

compliant

EAR99

8542.32.00.28

BGA

K4H510838D-ULB0T

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.5 V

750 ps

133 MHz

8192

CACHE DRAM MODULE

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

325 µA

CMOS

COMMERCIAL

R-PDSO-G66

Not Qualified

70 °C

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

MATTE TIN

GULL WING

635 µm

DUAL

SAMSUNG SEMICONDUCTOR INC

TSSOP, TSSOP66,.46

compliant

EAR99

8542.32.00.28

K4H510838J-LICCT

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.5 V

650 ps

200 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

200 µA

CMOS

INDUSTRIAL

R-PDSO-G66

Not Qualified

85 °C

-40 °C

260

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

MATTE TIN

GULL WING

635 µm

DUAL

SAMSUNG SEMICONDUCTOR INC

TSSOP, TSSOP66,.46

compliant

EAR99

8542.32.00.28

K4H510838D-ZPB3T

Samsung Semiconductor

Check for Price

Yes

Obsolete

536.8709 Mbit

64MX8

2.5 V

700 ps

166 MHz

8192

DDR1 DRAM

COMMON

2,4,8

64000000

67.1089 M

3-STATE

2,4,8

5 mA

360 µA

CMOS

AUTOMOTIVE

R-PBGA-B60

Not Qualified

125 °C

-40 °C

PLASTIC/EPOXY

BGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY

YES

MATTE TIN

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

BGA, BGA60,9X12,40/32

compliant

EAR99

8542.32.00.28

1 2 3 4 5 Next