Findchips: Parametric Search Results for k4b2g1646q

Parametric results for: k4b2g1646q under DRAMs

Select parts from the table below to compare.

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Select Parts		Part Number

		K4B2G1646Q-BCK0 Samsung Semiconductor
		K4B2G1646Q-BCK0T Samsung Semiconductor
		K4B2G1646Q-BIH90 Samsung Semiconductor
		K4B2G1646Q-BPK00 Samsung Semiconductor
		K4B2G1646Q-BCNBT Samsung Semiconductor
		K4B2G1646Q-BHH90 Samsung Semiconductor
		K4B2G1646Q-BCMA0 Samsung Semiconductor
		K4B2G1646Q-BCK00 Samsung Semiconductor
		K4B2G1646Q-BIH9T Samsung Semiconductor
		K4B2G1646Q-BHK00 Samsung Semiconductor

				Most Relevant								Technical																		Compliance		Operating Conditions				Physical										Dimensions			Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Clock Frequency-Max (fCLK)	Refresh Cycles	Access Mode	Memory IC Type	Additional Feature	I/O Type	Interleaved Burst Length	Number of Functions	Number of Ports	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Self Refresh	Sequential Burst Length	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

Check for Price

Yes

Obsolete

2.1475 Gbit

128MX16

1.5 V

225 ps

800 MHz

8192

MULTI BANK PAGE BURST

DDR3 DRAM

AUTO/SELF REFRESH

COMMON

128000000

134.2177 M

SYNCHRONOUS

3-STATE

YES

11 mA

219 µA

1.575 V

1.425 V

CMOS

OTHER

R-PBGA-B96

Not Qualified

85 °C

NOT SPECIFIED

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.2 mm

13.3 mm

7.5 mm

SAMSUNG SEMICONDUCTOR INC

BGA

HALOGEN FREE AND ROHS COMPLIANT, FBGA-96

compliant

EAR99

8542.32.00.36

Check for Price

Yes

Obsolete

2.1475 Gbit

128MX16

1.5 V

225 ps

800 MHz

8192

DDR3 DRAM

COMMON

128000000

134.2177 M

3-STATE

11 mA

219 µA

CMOS

OTHER

R-PBGA-B96

Not Qualified

85 °C

PLASTIC/EPOXY

FBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA96,9X16,32

compliant

EAR99

8542.32.00.36

Check for Price

Yes

Obsolete

2.1475 Gbit

128MX16

1.5 V

255 ps

667 MHz

8192

MULTI BANK PAGE BURST

DDR3 DRAM

AUTO/SELF REFRESH

COMMON

128000000

134.2177 M

SYNCHRONOUS

3-STATE

YES

11 mA

193 µA

1.575 V

1.425 V

CMOS

INDUSTRIAL

R-PBGA-B96

Not Qualified

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.2 mm

13.3 mm

7.5 mm

SAMSUNG SEMICONDUCTOR INC

BGA

TFBGA, BGA96,9X16,32

compliant

EAR99

8542.32.00.36

Check for Price

Obsolete

2.1475 Gbit

128MX16

1.5 V

MULTI BANK PAGE BURST

DDR DRAM

AUTO/SELF REFRESH

128000000

134.2177 M

SYNCHRONOUS

YES

1.575 V

1.425 V

CMOS

R-PBGA-B96

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.2 mm

13.3 mm

7.5 mm

SAMSUNG SEMICONDUCTOR INC

TFBGA,

unknown

EAR99

8542.32.00.36

Check for Price

Yes

Obsolete

2.1475 Gbit

128MX16

1.5 V

180 ps

1.066 GHz

8192

DDR3 DRAM

COMMON

128000000

134.2177 M

3-STATE

12 mA

245 µA

CMOS

OTHER

R-PBGA-B96

Not Qualified

85 °C

PLASTIC/EPOXY

FBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA96,9X16,32

compliant

EAR99

8542.32.00.36

Check for Price

Obsolete

2.1475 Gbit

128MX16

1.35 V

MULTI BANK PAGE BURST

DDR DRAM

AUTO/SELF REFRESH

128000000

134.2177 M

SYNCHRONOUS

YES

1.45 V

1.283 V

CMOS

R-PBGA-B96

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.2 mm

13.3 mm

7.5 mm

SAMSUNG SEMICONDUCTOR INC

TFBGA,

unknown

EAR99

8542.32.00.36

Check for Price

Yes

Obsolete

2.1475 Gbit

128MX16

1.5 V

195 ps

933 MHz

8192

MULTI BANK PAGE BURST

DDR3 DRAM

AUTO/SELF REFRESH

COMMON

128000000

134.2177 M

SYNCHRONOUS

3-STATE

YES

12 mA

238 µA

1.575 V

1.425 V

CMOS

OTHER

R-PBGA-B96

Not Qualified

85 °C

NOT SPECIFIED

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.2 mm

13.3 mm

7.5 mm

SAMSUNG SEMICONDUCTOR INC

BGA

TFBGA, BGA96,9X16,32

compliant

EAR99

8542.32.00.36

Check for Price

Yes

Obsolete

2.1475 Gbit

128MX16

1.5 V

225 ps

800 MHz

8192

MULTI BANK PAGE BURST

DDR3 DRAM

AUTO/SELF REFRESH

COMMON

128000000

134.2177 M

SYNCHRONOUS

3-STATE

YES

11 mA

219 µA

1.575 V

1.425 V

CMOS

OTHER

R-PBGA-B96

Not Qualified

85 °C

NOT SPECIFIED

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.2 mm

13.3 mm

7.5 mm

SAMSUNG SEMICONDUCTOR INC

BGA

TFBGA, BGA96,9X16,32

compliant

EAR99

8542.32.00.36

Check for Price

Yes

Obsolete

2.1475 Gbit

128MX16

1.5 V

255 ps

667 MHz

8192

DDR3 DRAM

COMMON

128000000

134.2177 M

3-STATE

11 mA

193 µA

CMOS

INDUSTRIAL

R-PBGA-B96

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

FBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA96,9X16,32

compliant

EAR99

8542.32.00.36

Check for Price

Obsolete

2.1475 Gbit

128MX16

1.35 V

MULTI BANK PAGE BURST

DDR DRAM

AUTO/SELF REFRESH

128000000

134.2177 M

SYNCHRONOUS

YES

1.45 V

1.283 V

CMOS

R-PBGA-B96

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.2 mm

13.3 mm

7.5 mm

SAMSUNG SEMICONDUCTOR INC

TFBGA,

unknown

EAR99

8542.32.00.36

1 2 3 Next

Compare

K4B2G1646Q-BCK0

Samsung Semiconductor

Check for Price

Yes

Obsolete

2.1475 Gbit

128MX16

1.5 V

225 ps

800 MHz

8192

MULTI BANK PAGE BURST

DDR3 DRAM

AUTO/SELF REFRESH

COMMON

128000000

134.2177 M

SYNCHRONOUS

3-STATE

YES

11 mA

219 µA

1.575 V

1.425 V

CMOS

OTHER

R-PBGA-B96

Not Qualified

85 °C

NOT SPECIFIED

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.2 mm

13.3 mm

7.5 mm

SAMSUNG SEMICONDUCTOR INC

BGA

HALOGEN FREE AND ROHS COMPLIANT, FBGA-96

compliant

EAR99

8542.32.00.36

K4B2G1646Q-BCK0T

Samsung Semiconductor

Check for Price

Yes

Obsolete

2.1475 Gbit

128MX16

1.5 V

225 ps

800 MHz

8192

DDR3 DRAM

COMMON

128000000

134.2177 M

3-STATE

11 mA

219 µA

CMOS

OTHER

R-PBGA-B96

Not Qualified

85 °C

PLASTIC/EPOXY

FBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA96,9X16,32

compliant

EAR99

8542.32.00.36

K4B2G1646Q-BIH90

Samsung Semiconductor

Check for Price

Yes

Obsolete

2.1475 Gbit

128MX16

1.5 V

255 ps

667 MHz

8192

MULTI BANK PAGE BURST

DDR3 DRAM

AUTO/SELF REFRESH

COMMON

128000000

134.2177 M

SYNCHRONOUS

3-STATE

YES

11 mA

193 µA

1.575 V

1.425 V

CMOS

INDUSTRIAL

R-PBGA-B96

Not Qualified

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.2 mm

13.3 mm

7.5 mm

SAMSUNG SEMICONDUCTOR INC

BGA

TFBGA, BGA96,9X16,32

compliant

EAR99

8542.32.00.36

K4B2G1646Q-BPK00

Samsung Semiconductor

Check for Price

Obsolete

2.1475 Gbit

128MX16

1.5 V

MULTI BANK PAGE BURST

DDR DRAM

AUTO/SELF REFRESH

128000000

134.2177 M

SYNCHRONOUS

YES

1.575 V

1.425 V

CMOS

R-PBGA-B96

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.2 mm

13.3 mm

7.5 mm

SAMSUNG SEMICONDUCTOR INC

TFBGA,

unknown

EAR99

8542.32.00.36

K4B2G1646Q-BCNBT

Samsung Semiconductor

Check for Price

Yes

Obsolete

2.1475 Gbit

128MX16

1.5 V

180 ps

1.066 GHz

8192

DDR3 DRAM

COMMON

128000000

134.2177 M

3-STATE

12 mA

245 µA

CMOS

OTHER

R-PBGA-B96

Not Qualified

85 °C

PLASTIC/EPOXY

FBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA96,9X16,32

compliant

EAR99

8542.32.00.36

K4B2G1646Q-BHH90

Samsung Semiconductor

Check for Price

Obsolete

2.1475 Gbit

128MX16

1.35 V

MULTI BANK PAGE BURST

DDR DRAM

AUTO/SELF REFRESH

128000000

134.2177 M

SYNCHRONOUS

YES

1.45 V

1.283 V

CMOS

R-PBGA-B96

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.2 mm

13.3 mm

7.5 mm

SAMSUNG SEMICONDUCTOR INC

TFBGA,

unknown

EAR99

8542.32.00.36

K4B2G1646Q-BCMA0

Samsung Semiconductor

Check for Price

Yes

Obsolete

2.1475 Gbit

128MX16

1.5 V

195 ps

933 MHz

8192

MULTI BANK PAGE BURST

DDR3 DRAM

AUTO/SELF REFRESH

COMMON

128000000

134.2177 M

SYNCHRONOUS

3-STATE

YES

12 mA

238 µA

1.575 V

1.425 V

CMOS

OTHER

R-PBGA-B96

Not Qualified

85 °C

NOT SPECIFIED

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.2 mm

13.3 mm

7.5 mm

SAMSUNG SEMICONDUCTOR INC

BGA

TFBGA, BGA96,9X16,32

compliant

EAR99

8542.32.00.36

K4B2G1646Q-BCK00

Samsung Semiconductor

Check for Price

Yes

Obsolete

2.1475 Gbit

128MX16

1.5 V

225 ps

800 MHz

8192

MULTI BANK PAGE BURST

DDR3 DRAM

AUTO/SELF REFRESH

COMMON

128000000

134.2177 M

SYNCHRONOUS

3-STATE

YES

11 mA

219 µA

1.575 V

1.425 V

CMOS

OTHER

R-PBGA-B96

Not Qualified

85 °C

NOT SPECIFIED

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.2 mm

13.3 mm

7.5 mm

SAMSUNG SEMICONDUCTOR INC

BGA

TFBGA, BGA96,9X16,32

compliant

EAR99

8542.32.00.36

K4B2G1646Q-BIH9T

Samsung Semiconductor

Check for Price

Yes

Obsolete

2.1475 Gbit

128MX16

1.5 V

255 ps

667 MHz

8192

DDR3 DRAM

COMMON

128000000

134.2177 M

3-STATE

11 mA

193 µA

CMOS

INDUSTRIAL

R-PBGA-B96

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

FBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

SAMSUNG SEMICONDUCTOR INC

FBGA, BGA96,9X16,32

compliant

EAR99

8542.32.00.36

K4B2G1646Q-BHK00

Samsung Semiconductor

Check for Price

Obsolete

2.1475 Gbit

128MX16

1.35 V

MULTI BANK PAGE BURST

DDR DRAM

AUTO/SELF REFRESH

128000000

134.2177 M

SYNCHRONOUS

YES

1.45 V

1.283 V

CMOS

R-PBGA-B96

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.2 mm

13.3 mm

7.5 mm

SAMSUNG SEMICONDUCTOR INC

TFBGA,

unknown

EAR99

8542.32.00.36

1 2 3 Next