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K4B1G0446C-ZCG9
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 1.0737 Gbit | 4 | 256MX4 | 1.5 V | 255 ps | 667 MHz | 8192 | DDR3 DRAM | COMMON | 8 | 256000000 | 268.4355 M | 3-STATE | 8 | CMOS | R-PBGA-B94 | Not Qualified | e3 | 1 | 94 | PLASTIC/EPOXY | FBGA | BGA94,11X19,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | MATTE TIN | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | FBGA, BGA94,11X19,32 | compliant | EAR99 | 8542.32.00.32 | |||||||||||||||||||
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K4B1G0446C-ZCH9T
Samsung Semiconductor
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Check for Price | Yes | Active | 1.0737 Gbit | 4 | 256MX4 | 1.5 V | 255 ps | 667 MHz | 8192 | DDR3 DRAM | COMMON | 8 | 256000000 | 268.4355 M | 3-STATE | 8 | CMOS | R-PBGA-B94 | Not Qualified | 94 | PLASTIC/EPOXY | FBGA | BGA94,11X19,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.32 | ||||||||||||||||||||||||
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K4B1G0446C-ZCF8
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 1.0737 Gbit | 4 | 256MX4 | 1.5 V | 300 ps | 533 MHz | 8192 | DDR3 DRAM | COMMON | 8 | 256000000 | 268.4355 M | 3-STATE | 8 | CMOS | R-PBGA-B94 | Not Qualified | 3 | 260 | 94 | PLASTIC/EPOXY | FBGA | BGA94,11X19,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | FBGA, BGA94,11X19,32 | compliant | EAR99 | 8542.32.00.32 | ||||||||||||||||||||
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K4B1G0446C-ZCF7T
Samsung Semiconductor
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Check for Price | Yes | Active | 1.0737 Gbit | 4 | 256MX4 | 1.5 V | 400 ps | 400 MHz | 8192 | DDR3 DRAM | COMMON | 8 | 256000000 | 268.4355 M | 3-STATE | 8 | CMOS | R-PBGA-B94 | Not Qualified | 94 | PLASTIC/EPOXY | FBGA | BGA94,11X19,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.32 | ||||||||||||||||||||||||
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K4B1G0446C-ZCF8T
Samsung Semiconductor
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Check for Price | Yes | Active | 1.0737 Gbit | 4 | 256MX4 | 1.5 V | 300 ps | 533 MHz | 8192 | DDR3 DRAM | COMMON | 8 | 256000000 | 268.4355 M | 3-STATE | 8 | CMOS | R-PBGA-B94 | Not Qualified | 94 | PLASTIC/EPOXY | FBGA | BGA94,11X19,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.32 | ||||||||||||||||||||||||
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K4B1G0446C-ZCG8T
Samsung Semiconductor
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Check for Price | Yes | Active | 1.0737 Gbit | 4 | 256MX4 | 1.5 V | 300 ps | 533 MHz | 8192 | DDR3 DRAM | COMMON | 8 | 256000000 | 268.4355 M | 3-STATE | 8 | CMOS | R-PBGA-B94 | Not Qualified | 94 | PLASTIC/EPOXY | FBGA | BGA94,11X19,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.32 | ||||||||||||||||||||||||
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K4B1G0446C-ZCH9
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 1.0737 Gbit | 4 | 256MX4 | 1.5 V | 255 ps | 667 MHz | 8192 | DDR3 DRAM | COMMON | 8 | 256000000 | 268.4355 M | 3-STATE | 8 | CMOS | R-PBGA-B94 | Not Qualified | 3 | 260 | 94 | PLASTIC/EPOXY | FBGA | BGA94,11X19,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | FBGA, BGA94,11X19,32 | compliant | EAR99 | 8542.32.00.32 | ||||||||||||||||||||
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K4B1G0446C-ZCF70
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 1.0737 Gbit | 4 | 256MX4 | 1.5 V | 400 ps | 400 MHz | 8192 | MULTI BANK PAGE BURST | DDR3 DRAM | AUTO/SELF REFRESH | COMMON | 8 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 8 | 1.575 V | 1.452 V | CMOS | COMMERCIAL EXTENDED | R-PBGA-B94 | Not Qualified | 85 °C | NOT SPECIFIED | NOT SPECIFIED | 94 | PLASTIC/EPOXY | TFBGA | BGA94,11X19,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 18 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | TFBGA, BGA94,11X19,32 | compliant | EAR99 | 8542.32.00.32 | BGA | 94 | ||||||
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K4B1G0446C-ZCG9T
Samsung Semiconductor
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Check for Price | Yes | Active | 1.0737 Gbit | 4 | 256MX4 | 1.5 V | 255 ps | 667 MHz | 8192 | DDR3 DRAM | COMMON | 8 | 256000000 | 268.4355 M | 3-STATE | 8 | CMOS | R-PBGA-B94 | Not Qualified | 94 | PLASTIC/EPOXY | FBGA | BGA94,11X19,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.32 | ||||||||||||||||||||||||
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K4B1G0446C-ZCG80
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 1.0737 Gbit | 4 | 256MX4 | 1.5 V | 300 ps | 533 MHz | 8192 | MULTI BANK PAGE BURST | DDR3 DRAM | AUTO/SELF REFRESH | COMMON | 8 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 8 | 1.575 V | 1.452 V | CMOS | COMMERCIAL EXTENDED | R-PBGA-B94 | Not Qualified | 85 °C | NOT SPECIFIED | NOT SPECIFIED | 94 | PLASTIC/EPOXY | TFBGA | BGA94,11X19,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 18 mm | 11 mm | SAMSUNG SEMICONDUCTOR INC | TFBGA, BGA94,11X19,32 | compliant | EAR99 | 8542.32.00.32 | BGA | 94 |