Parametric results for: jantxv2n4957 under RF Small Signal Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Transition Frequency-Nom (fT)

LOW NOISE 3

6 hits Apply

ISOLATED 2

6 hits Apply

Collector Current-Max (IC) (1)

30 mA 6

6 hits Apply

0.8 pF 6

6 hits Apply

Collector-Emitter Voltage-Max (1)

30 V 6

6 hits Apply

Configuration (1)

SINGLE 6

6 hits Apply

DC Current Gain-Min (hFE) (2)

10.0 1 20.0 2

Min - Max

6 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 6

6 hits Apply

TO-72 3

6 hits Apply

O-MBCY-W4 3 R-CDSO-N3 3

6 hits Apply

e0 1 e4 1

6 hits Apply

Manufacturer (3)

Defense Logistics Agency 2 Microsemi Corporation 2 Semicoa Semiconductors 2

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (2)

3 3 4 3

6 hits Apply

200.0 °C 3

6 hits Apply

-65.0 °C 1

6 hits Apply

CERAMIC, METAL-SEALED COFIRED 3 METAL 3

6 hits Apply

RECTANGULAR 3 ROUND 3

6 hits Apply

CYLINDRICAL 3 SMALL OUTLINE 3

6 hits Apply

Active 2 Contact Manufacturer 2 Obsolete 2

6 hits Apply

NOT SPECIFIED 2

6 hits Apply

Polarity/Channel Type (1)

PNP 6

6 hits Apply

200 mW 3

6 hits Apply

Power Gain-Min (Gp) (1)

17.0 dB 1

6 hits Apply

Surface Mount (2)

NO 3 YES 3

6 hits Apply

Transition Frequency-Nom (fT) (1)

1.2 GHz 2

6 hits Apply