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JANTXV1N5810
Microsemi Corporation
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Check for Price | No | Obsolete | 6 A | 875 mV | 30 ns | 5 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | Not Qualified | O-LALF-W2 | e0 | MIL-19500/477 | 200 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | O-LALF-W2 | unknown | EAR99 | 8541.10.00.80 | ||||
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JANTXV1N5810
Sensitron Semiconductors
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Check for Price | No | Active | 6 A | 875 mV | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 125 V | 1 | METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | Not Qualified | O-LALF-W2 | e0 | MIL-19500/477 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | SENSITRON SEMICONDUCTOR | O-LALF-W2 | compliant | EAR99 | 8541.10.00.80 | |||||
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JANTXV1N5810US
Microsemi Corporation
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Check for Price | No | No | Obsolete | 6 A | 875 mV | 30 ns | 5 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | LEAKAGE CURRENT IS TYPICAL | EFFICIENCY | 125 A | 1 | Not Qualified | O-XELF-R2 | e0 | MIL-19500/477 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | O-XELF-R2 | compliant | EAR99 | 8541.10.00.80 | |||
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JANTXV1N5810US
Sensitron Semiconductors
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Check for Price | No | Active | 6 A | 875 mV | 30 ns | RECTIFIER DIODE | SINGLE | YES | 125 V | 1 | GENERAL PURPOSE | 125 A | 1 | Not Qualified | 200 °C | SENSITRON SEMICONDUCTOR | compliant | EAR99 |