Filter Your Search
1 - 10 of 27 results
|
JANTXV1N5310-1
Microchip Technology Inc
|
$37.5039 | No | Active | 2.35 V | 3.3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 280 kΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||||
|
JANTXV1N5310UR-1
Microchip Technology Inc
|
$41.6318 | No | Active | 2.35 V | 3.3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | |||||||||
|
JANTXV1N5310UR
Microsemi Corporation
|
Check for Price | No | Obsolete | 2.35 V | 3.3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | 280 kΩ | Not Qualified | O-XELF-R2 | e0 | DO-213AB | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WRAP AROUND | END | MICROSEMI CORP | O-XELF-R2 | compliant | DO-213AB | 2 | EAR99 | 8541.10.00.70 | |||||||||
|
JANTXV1N5310UR-1
Compensated Devices Inc
|
Check for Price | Transferred | 2.35 V | 3.3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 24 kΩ | Not Qualified | O-XELF-R2 | MIL-19500/463G | DO-213AB | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WRAP AROUND | END | COMPENSATED DEVICES INC | HERMETIC SEALED PACKAGE-2 | unknown | ||||||||||||
|
JANTXV1N5310UR
Compensated Devices Inc
|
Check for Price | Obsolete | 2.35 V | 3.3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | Not Qualified | O-XELF-R2 | MIL-19500/463G | DO-213AB | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WRAP AROUND | END | COMPENSATED DEVICES INC | HERMETIC SEALED PACKAGE-2 | unknown | ||||||||||||||||
|
JANTXV1N5310UR-1
Microsemi Corporation
|
Check for Price | No | No | Transferred | 2.35 V | 3.3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | HERMETIC SEALED, GLASS, LL41, MELF-2 | unknown | DO-213AB | 2 | EAR99 | 8541.10.00.70 | |||||
|
JANTXV1N5310
CRYSTALONICS Inc
|
Check for Price | Contact Manufacturer | 2.35 V | 3.3 mA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | Not Qualified | O-LALF-W2 | DO-7 | 200 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | CRYSTALONICS INC | O-LALF-W2 | unknown | DO-7 | 2 | EAR99 | 8541.10.00.70 | |||||||||||
|
JANTXV1N5310
Motorola Mobility LLC
|
Check for Price | Obsolete | 2.35 V | 3.3 mA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 24 kΩ | Not Qualified | O-LALF-W2 | DO-204AA | 200 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MOTOROLA INC | O-LALF-W2 | unknown | EAR99 | 8541.10.00.70 | ||||||||||||
|
JANTXV1N5310-1
Cobham PLC
|
Check for Price | Transferred | 2.35 V | 3.3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 1 | FIELD EFFECT | Not Qualified | O-LALF-W2 | MIL-19500/463 | DO-7 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | COBHAM PLC | GLASS PACKAGE-2 | unknown | |||||||||||||||||
|
JANTXV1N5310UR-1
Cobham PLC
|
Check for Price | Transferred | 2.35 V | 3.3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-XELF-R2 | DO-213AB | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WRAP AROUND | END | COBHAM PLC | unknown | EAR99 | 8541.10.00.70 |