Parametric results for: jansr2n7550u2 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ULTRA-LOW RESISTANCE 2

3 hits Apply

400.0 mJ 3

3 hits Apply

DRAIN 3

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

100 V 3

3 hits Apply

Drain Current-Max (ID) (1)

47 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

49 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

115 pF 1

3 hits Apply

R-CBCC-N3 2 S-CSSO-G2 1

3 hits Apply

e0 2

3 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 International Rectifier 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (2)

2 1 3 2

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

-55.0 °C 1

3 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

3 hits Apply

RECTANGULAR 2 SQUARE 1

3 hits Apply

CHIP CARRIER 2 SMALL OUTLINE 1

3 hits Apply

Active 2 Transferred 1

3 hits Apply

No 1

3 hits Apply

NOT SPECIFIED 2

3 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 3

3 hits Apply

250 W 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply