Parametric results for: jan1n58 under Rectifier Diodes

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Manufacturer Part Number: jan1n58
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JAN1N5811
Semtech Corporation
$1.0000 Transferred 6 A 875 mV 30 ns 5 µA SILICON RECTIFIER DIODE SINGLE NO 150 V 1 SUPER FAST RECOVERY 125 A 1 Qualified O-LALF-W2 MIL-19500/477 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL SEMTECH CORP G112, 2 PIN 2 G112 unknown EAR99 8541.10.00.80 SEMTECH
JAN1N5806
Semtech Corporation
$1.0000 Transferred 3.3 A 875 mV 25 ns 1 µA SILICON RECTIFIER DIODE SINGLE NO 150 V 1 SUPER FAST RECOVERY 35 A 1 Qualified O-LALF-W2 MIL-19500/477 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL SEMTECH CORP G111, 2 PIN 2 G111 unknown EAR99 8541.10.00.80 SEMTECH
JAN1N5806
Microchip Technology Inc
$4.9560 No Active 1 A 25 ns 3 W SILICON RECTIFIER DIODE SINGLE NO 150 V 1 AVALANCHE HIGH RELIABILITY GENERAL PURPOSE 1 Qualified O-LALF-W2 e0 MIL-19500 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD OVER NICKEL WIRE AXIAL MICROCHIP TECHNOLOGY INC compliant
JAN1N5804
Microchip Technology Inc
$6.3626 No Active 2.5 A 875 mV 25 ns 3 W SILICON RECTIFIER DIODE SINGLE NO 100 V 1 AVALANCHE HIGH RELIABILITY ULTRA FAST RECOVERY POWER 35 A 1 Qualified O-XALF-W2 e0 MIL-19500 1 175 °C -65 °C ISOLATED 2 UNSPECIFIED ROUND LONG FORM TIN LEAD WIRE AXIAL MICROCHIP TECHNOLOGY INC compliant
JAN1N5806US
Microchip Technology Inc
$6.6802 No Active 2.5 A 25 ns SILICON RECTIFIER DIODE SINGLE YES 150 V 1 ULTRA FAST RECOVERY POWER 35 A 1 Qualified O-LELF-R2 e0 MIL-19500/477F ISOLATED 2 GLASS ROUND LONG FORM Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier WRAP AROUND END MICROCHIP TECHNOLOGY INC compliant Microchip
JAN1N5811
Microchip Technology Inc
$6.6802 No Active 6 A 875 mV 30 ns 5 W SILICON RECTIFIER DIODE SINGLE NO 150 V 1 HIGH RELIABILITY, METALLURGICALLY BONDED ULTRA FAST RECOVERY POWER 125 A 1 Qualified O-XALF-W2 e0 MIL-19500 175 °C -65 °C ISOLATED 2 UNSPECIFIED ROUND LONG FORM TIN LEAD OVER NICKEL WIRE AXIAL MICROCHIP TECHNOLOGY INC compliant Microchip
JAN1N5807
Microchip Technology Inc
$6.6802 No Active 3 A 30 ns 5 W SILICON RECTIFIER DIODE SINGLE NO 50 V 1 HIGH RELIABILITY, METALLURGICALLY BONDED ULTRA FAST RECOVERY 125 A 1 Qualified O-LALF-W2 e0 MIL-19500 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL MICROCHIP TECHNOLOGY INC HERMETIC SEALED, GLASS PACKAGE-2 compliant
JAN1N5809
Microchip Technology Inc
$6.6802 No Active 6 A 875 mV 30 ns 5 W SILICON RECTIFIER DIODE SINGLE NO 100 V 1 HIGH RELIABILITY, METALLURGICALLY BONDED ULTRA FAST RECOVERY POWER 125 A 1 Qualified O-XALF-W2 e0 MIL-19500 1 175 °C -65 °C ISOLATED 2 UNSPECIFIED ROUND LONG FORM TIN LEAD OVER NICKEL WIRE AXIAL MICROCHIP TECHNOLOGY INC compliant
JAN1N5807/TR
Microchip Technology Inc
$6.7684 Active 3 A 30 ns 5 W SILICON RECTIFIER DIODE SINGLE NO 50 V 1 HIGH RELIABILITY, METALLURGICALLY BONDED ULTRA FAST RECOVERY 125 A 1 Qualified O-LALF-W2 e0 MIL-19500 175 °C -65 °C NOT SPECIFIED NOT SPECIFIED ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL MICROCHIP TECHNOLOGY INC unknown EAR99 8541.10.00.80
JAN1N5806US/TR
Microchip Technology Inc
$6.8390 Active 2.5 A 25 ns SILICON RECTIFIER DIODE SINGLE YES 150 V 1 ULTRA FAST RECOVERY POWER 35 A 1 Qualified O-LELF-R2 e0 MIL-19500/477F NOT SPECIFIED NOT SPECIFIED ISOLATED 2 GLASS ROUND LONG FORM Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier WRAP AROUND END MICROCHIP TECHNOLOGY INC unknown EAR99 8541.10.00.80