Parametric results for: jan1n5298 under Current Regulator Diodes
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JAN1N5298-1
Microchip Technology Inc
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$32.4578 | No | Active | 1.4 V | 1.1 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 700 kΩ | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-35, 2 PIN | compliant | ||||||||||||
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JAN1N5298-1/TR
Microchip Technology Inc
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$32.6179 | No | Active | 1.4 V | 1.1 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 700 kΩ | O-LALF-W2 | e0 | MIL-PRF-19500 | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | unknown | ||||||||||||||
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JAN1N5298UR-1
Microchip Technology Inc
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$37.7964 | No | Active | 1.4 V | 1.1 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, LL41, MELF-2 | compliant | |||||||||||
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JAN1N5298-1
MACOM
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Check for Price | Yes | Transferred | 1.4 V | 1.1 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 1 | FIELD EFFECT | HIGH SOURCE IMPEDANCE | Qualified | O-LALF-W2 | MIL-19500 | DO-7 | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | M/A-COM TECHNOLOGY SOLUTIONS INC | compliant | EAR99 | 8541.10.00.70 | ||||||||||||
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JAN1N5298UR
Compensated Devices Inc
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Check for Price | Obsolete | 1.4 V | 1.1 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | Not Qualified | O-XELF-R2 | MIL-19500/463G | DO-213AB | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WRAP AROUND | END | COMPENSATED DEVICES INC | HERMETIC SEALED PACKAGE-2 | unknown | ||||||||||||||||||
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JAN1N5298-1
Defense Logistics Agency
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Check for Price | Active | 1.4 V | 1.1 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | Qualified | O-XALF-W2 | MIL-19500/463G | DO-7 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | DEFENSE LOGISTICS AGENCY | HERMETIC SEALED PACKAGE-2 | unknown | ||||||||||||||||||
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JAN1N5298-1
Cobham Semiconductor Solutions
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Check for Price | No | No | Obsolete | 1.4 V | 1.1 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 1 | FIELD EFFECT | Not Qualified | O-LALF-W2 | e0 | MIL-19500/463 | DO-7 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | AEROFLEX/METELICS INC | GLASS PACKAGE-2 | unknown | EAR99 | 8541.10.00.70 | DO-7 | 2 | |||||||||||
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JAN1N5298-1
Compensated Devices Inc
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Check for Price | Transferred | 1.4 V | 1.1 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 180 kΩ | Not Qualified | O-XALF-W2 | MIL-19500/463G | DO-7 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | COMPENSATED DEVICES INC | HERMETIC SEALED PACKAGE-2 | unknown | ||||||||||||||
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JAN1N5298-1E3
Microsemi Corporation
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Check for Price | Active | MICROSEMI CORP-LAWRENCE | unknown | ||||||||||||||||||||||||||||||||||||||||
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JAN1N5298-1
Knox Semiconductor Inc
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Check for Price | No | Transferred | 1.4 V | 1.1 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 700 kΩ | Not Qualified | O-LALF-W2 | e0 | MIL-19500/463 | DO-7 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | KNOX SEMICONDUCTORS INC | GLASS PACKAGE-2 | unknown |