Parametric results for: ixta160n075t under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Surface Mount

AVALANCHE RATED 1

4 hits Apply

750.0 mJ 2

4 hits Apply

DRAIN 2

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

75 V 2

4 hits Apply

Drain Current-Max (ID) (1)

160 A 2

4 hits Apply

Drain-source On Resistance-Max (1)

6 mΩ 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

4 hits Apply

TO-263 1 TO-263AB 1

4 hits Apply

R-PSFM-G6 1 R-PSSO-G2 1

4 hits Apply

e3 2

4 hits Apply

Manufacturer (2)

IXYS Corporation 2 Littelfuse Inc 2

4 hits Apply

Number of Elements (1)

1 2

4 hits Apply

Number of Terminals (2)

2 1 6 1

4 hits Apply

ENHANCEMENT MODE 2

4 hits Apply

175.0 °C 2

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

FLANGE MOUNT 1 SMALL OUTLINE 1

4 hits Apply

Obsolete 4

4 hits Apply

Yes 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

4 hits Apply

Surface Mount (1)

YES 2

4 hits Apply