Parametric results for: ixfk48n50 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 4

5 hits Apply

2500.0 mJ 2

5 hits Apply

DRAIN 5

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

500 V 5

5 hits Apply

Drain Current-Max (ID) (1)

48 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

100 mΩ 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-264 2 TO-264AA 3

5 hits Apply

R-PSFM-T3 5

5 hits Apply

e1 2

5 hits Apply

Manufacturer (2)

IXYS Corporation 3 Littelfuse Inc 2

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

3 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 5

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

FLANGE MOUNT 5

5 hits Apply

Not Recommended 2 Obsolete 1 Transferred 2

5 hits Apply

Yes 2

5 hits Apply

260 2 NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

500 W 2

5 hits Apply

500 W 3

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply