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IS49NLS96400A-25WBL
Integrated Silicon Solution Inc
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$56.0600 | Yes | Active | 603.9798 Mbit | 9 | 64MX9 | 1.8 V | MULTI BANK PAGE BURST | DDR DRAM | AUTO REFRESH | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 1.9 V | 1.7 V | CMOS | R-PBGA-B144 | NOT SPECIFIED | NOT SPECIFIED | 144 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 18.5 mm | 11 mm | INTEGRATED SILICON SOLUTION INC | TBGA, | compliant | EAR99 | 8542.32.00.32 | Integrated Silicon Solution Inc. | |||||||||||||||||
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IS49NLS96400A-25EWBL
Integrated Silicon Solution Inc
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$58.8550 | Active | 603.9798 Mbit | 9 | 64MX9 | 1.8 V | MULTI BANK PAGE BURST | DDR DRAM | AUTO REFRESH | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 1.9 V | 1.7 V | CMOS | R-PBGA-B144 | 260 | 144 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 18.5 mm | 11 mm | INTEGRATED SILICON SOLUTION INC | TBGA, | unknown | EAR99 | 8542.32.00.32 | ||||||||||||||||||||
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IS49NLS96400A-25WBLI
Integrated Silicon Solution Inc
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$61.6650 | Active | 603.9798 Mbit | 9 | 64MX9 | 1.8 V | MULTI BANK PAGE BURST | DDR DRAM | AUTO REFRESH | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B144 | 85 °C | -40 °C | 260 | 144 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 18.5 mm | 11 mm | INTEGRATED SILICON SOLUTION INC | TBGA, | unknown | EAR99 | 8542.32.00.32 | |||||||||||||||||
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IS49NLS18320A-18WBL
Integrated Silicon Solution Inc
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$61.8100 | Active | 603.9798 Mbit | 18 | 32MX18 | 1.8 V | MULTI BANK PAGE BURST | DDR DRAM | AUTO REFRESH | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 1.9 V | 1.7 V | CMOS | R-PBGA-B144 | 260 | 144 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 18.5 mm | 11 mm | INTEGRATED SILICON SOLUTION INC | TBGA, | unknown | EAR99 | 8542.32.00.32 | ||||||||||||||||||||
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IS49NLS96400A-18WBL
Integrated Silicon Solution Inc
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$61.8100 | Active | 603.9798 Mbit | 9 | 64MX9 | 1.8 V | MULTI BANK PAGE BURST | DDR DRAM | AUTO REFRESH | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 1.9 V | 1.7 V | CMOS | R-PBGA-B144 | 260 | 144 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 18.5 mm | 11 mm | INTEGRATED SILICON SOLUTION INC | TBGA, | unknown | EAR99 | 8542.32.00.32 | ||||||||||||||||||||
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IS49NLS96400A-25EWBLI
Integrated Silicon Solution Inc
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$64.7500 | Active | 603.9798 Mbit | 9 | 64MX9 | 1.8 V | MULTI BANK PAGE BURST | DDR DRAM | AUTO REFRESH | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B144 | 85 °C | -40 °C | 260 | 144 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 18.5 mm | 11 mm | INTEGRATED SILICON SOLUTION INC | TBGA, | unknown | EAR99 | 8542.32.00.32 | |||||||||||||||||
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IS49NLS96400A-33BLI
Integrated Silicon Solution Inc
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Check for Price | Obsolete | 603.9798 Mbit | 9 | 64MX9 | 1.8 V | MULTI BANK PAGE BURST | DDR DRAM | AUTO REFRESH | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B144 | 85 °C | -40 °C | 144 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 18.5 mm | 11 mm | INTEGRATED SILICON SOLUTION INC | FBGA-144 | unknown | EAR99 | 8542.32.00.32 | ||||||||||||||||||
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IS49NLS96400A-18EB
Integrated Silicon Solution Inc
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Check for Price | Obsolete | 603.9798 Mbit | 9 | 64MX9 | 1.8 V | MULTI BANK PAGE BURST | DDR DRAM | AUTO REFRESH | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 1.9 V | 1.7 V | CMOS | R-PBGA-B144 | 144 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 18.5 mm | 11 mm | INTEGRATED SILICON SOLUTION INC | FBGA-144 | unknown | EAR99 | 8542.32.00.32 | |||||||||||||||||||||
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IS49NLS96400-33BLI
Integrated Silicon Solution Inc
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Check for Price | Yes | Obsolete | 603.9798 Mbit | 9 | 64MX9 | 1.8 V | 3.3 ns | 333 MHz | MULTI BANK PAGE BURST | DDR1 DRAM | AUTO REFRESH | SEPARATE | 2,4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | 2,4,8 | 48 mA | 819 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B144 | Not Qualified | 85 °C | -40 °C | 144 | PLASTIC/EPOXY | TBGA | BGA144,12X18,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 18.5 mm | 11 mm | INTEGRATED SILICON SOLUTION INC | TBGA, BGA144,12X18,40/32 | compliant | EAR99 | 8542.32.00.32 | BGA | 144 | |||||
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IS49NLS96400-18BLI
Integrated Silicon Solution Inc
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Check for Price | Obsolete | 603.9798 Mbit | 9 | 64MX9 | 1.8 V | 1.875 ns | MULTI BANK PAGE BURST | DDR DRAM | AUTO REFRESH | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B144 | 85 °C | -40 °C | 144 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 18.5 mm | 11 mm | INTEGRATED SILICON SOLUTION INC | TBGA, | compliant | EAR99 | 8542.32.00.32 | BGA | 144 |