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1 - 10 of 11 results
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IRLL110TRPBF
Vishay Intertechnologies
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$0.3390 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 100 V | 1 | 1.5 A | 760 mΩ | AVALANCHE RATED | 50 mJ | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 3.1 W | 12 A | SWITCHING | SILICON | TO-261AA | R-PDSO-G4 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | VISHAY INTERTECHNOLOGY INC | not_compliant | EAR99 | 8541.29.00.95 | Vishay | |||||||
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IRLL110PBF
Vishay Siliconix
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$0.3806 | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 1.5 A | 540 mΩ | AVALANCHE RATED | 50 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 12 A | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | VISHAY SILICONIX | compliant | EAR99 | Vishay | SOT | ROHS COMPLIANT, SOIC-4 | 4 | |||||||||||
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IRLL110TRPBF
Vishay Siliconix
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$0.4908 | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 1.5 A | 540 mΩ | AVALANCHE RATED | 50 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 12 A | SWITCHING | SILICON | TO-261AA | R-PDSO-G3 | Not Qualified | 150 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | VISHAY SILICONIX | compliant | EAR99 | Vishay | TO-261AA | ROHS COMPLIANT, SOIC-4 | 4 | ||||||||||
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IRLL110TRPBF-BE3
Vishay Intertechnologies
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$0.6578 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 100 V | 1 | 1.5 A | 760 mΩ | AVALANCHE RATED | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 3.1 W | SWITCHING | SILICON | TO-261AA | R-PDSO-G4 | 150 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | VISHAY INTERTECHNOLOGY INC | unknown | EAR99 | Vishay | ||||||||||||||||
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IRLL110
Vishay Intertechnologies
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 100 V | 1 | 1.5 A | 540 mΩ | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | 50 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 3.1 W | 12 A | SWITCHING | SILICON | TO-261AA | R-PDSO-G4 | e0 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin/Lead (Sn/Pb) | GULL WING | DUAL | VISHAY INTERTECHNOLOGY INC | unknown | EAR99 | Vishay | TO-261AA | TO-261AA, 4 PIN | 4 | ||||||
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IRLL110TR
International Rectifier
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Check for Price | No | Transferred | N-CHANNEL | YES | SINGLE | 4 | 100 V | 1 | 1.5 A | 540 mΩ | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2 W | SWITCHING | SILICON | TO-261AA | R-PDSO-G4 | e0 | Not Qualified | 1 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | DUAL | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | 8541.29.00.95 | |||||||||||||||
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IRLL110PBF
International Rectifier
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 100 V | 1 | 1.5 A | 540 mΩ | LOGIC LEVEL COMPATIBLE | 50 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2 W | 12 A | SWITCHING | SILICON | TO-261AA | R-PDSO-G4 | e3 | Not Qualified | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | 8541.29.00.95 | TO-261AA | LEAD FREE, SOT-223, 3 PIN | 3 | |||||||
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IRLL110TRPBF
International Rectifier
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Check for Price | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 100 V | 1 | 1.5 A | 540 mΩ | LOGIC LEVEL COMPATIBLE | 50 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2 W | 12 A | SWITCHING | SILICON | TO-261AA | R-PDSO-G4 | e3 | Not Qualified | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | 8541.29.00.95 | TO-261AA | LEAD FREE, SOT-223, 3 PIN | 3 | ||||||||
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IRLL110PBF
Vishay Intertechnologies
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 100 V | 1 | 1.5 A | 760 mΩ | AVALANCHE RATED | 50 mJ | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 3.1 W | 12 A | SWITCHING | SILICON | TO-261AA | R-PDSO-G4 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | VISHAY INTERTECHNOLOGY INC | not_compliant | EAR99 | Vishay | TO-261AA | SOT-223, 4 PIN | 4 | ||||
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IRLL110
Vishay Siliconix
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Check for Price | No | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 1.5 A | 540 mΩ | AVALANCHE RATED | 50 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 12 A | SWITCHING | SILICON | R-PDSO-G3 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | DUAL | VISHAY SILICONIX | compliant | EAR99 | Vishay | SOT | SOIC-4 | 4 |