Parametric results for: irld014pbf under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 3

3 hits Apply

490.0 mJ 1

3 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 1

3 hits Apply

DS Breakdown Voltage-Min (1)

60 V 1

3 hits Apply

Drain Current-Max (ID) (1)

1.7 A 2

3 hits Apply

Drain-source On Resistance-Max (1)

200 mΩ 1

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

R-PDIP-T3 2 R-PDIP-T4 1

3 hits Apply

e3 3

3 hits Apply

Manufacturer (3)

International Rectifier 1 Vishay Intertechnologies 1 Vishay Siliconix 1

3 hits Apply

1 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (2)

3 2 4 1

3 hits Apply

ENHANCEMENT MODE 1

3 hits Apply

175.0 °C 2

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

IN-LINE 3

3 hits Apply

Active 1 Transferred 2

3 hits Apply

Yes 2

3 hits Apply

260 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

3 hits Apply

1.3 W 1

3 hits Apply

1.3 W 1

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply