Parametric results for: irhs130 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

RADIATION HARDENED 3

78 hits Apply

309.0 mJ 2 370.0 mJ 37 500.0 mJ 35

Min (mJ) - Max (mJ)

78 hits Apply

DRAIN 74

78 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 74

78 hits Apply

DS Breakdown Voltage-Min (2)

30 V 35 60 V 39

Min (V) - Max (V)

78 hits Apply

Drain Current-Max (ID) (2)

56 A 2 75 A 72

Min (A) - Max (A)

78 hits Apply

Drain-source On Resistance-Max (5)

3.5 mΩ 19 4 mΩ 16 5.6 mΩ 17 6.1 mΩ 21 6.5 mΩ 1

Min (Ω) - Max (Ω)

78 hits Apply

METAL-OXIDE SEMICONDUCTOR 74

78 hits Apply

R-CBCC-N3 68 R-XBCC-N3 2 R-XDSO-N3 4

78 hits Apply

e0 32

78 hits Apply

Manufacturer (2)

Infineon Technologies AG 46 International Rectifier 32

78 hits Apply

Number of Elements (1)

1 74

78 hits Apply

Number of Terminals (1)

3 74

78 hits Apply

ENHANCEMENT MODE 74

78 hits Apply

125.0 °C 12 150.0 °C 57

Min (°C) - Max (°C)

78 hits Apply

-55.0 °C 9

78 hits Apply

CERAMIC, METAL-SEALED COFIRED 68 UNSPECIFIED 6

78 hits Apply

RECTANGULAR 74

78 hits Apply

CHIP CARRIER 70 SMALL OUTLINE 4

78 hits Apply

Active 37 Obsolete 10 Transferred 31

78 hits Apply

No 16 Yes 16

78 hits Apply

260 16 NOT SPECIFIED 24

78 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 74

78 hits Apply

250 W 39

78 hits Apply

Surface Mount (1)

YES 74

78 hits Apply