Parametric results for: irhq4214 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 4

4 hits Apply

62.0 mJ 4

4 hits Apply

Configuration (1)

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

250 V 4

4 hits Apply

Drain Current-Max (ID) (1)

1.6 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

2.25 Ω 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-CQCC-N28 4

4 hits Apply

e0 1

4 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 International Rectifier 2

4 hits Apply

Number of Elements (1)

4 4

4 hits Apply

Number of Terminals (1)

28 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 3

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

CHIP CARRIER 4

4 hits Apply

Active 1 Obsolete 2 Transferred 1

4 hits Apply

Yes 1

4 hits Apply

260 1 NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

12 W 1

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply