Parametric results for: irhna57163se under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

280.0 mJ 5

5 hits Apply

DRAIN 5

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

130 V 5

5 hits Apply

Drain Current-Max (ID) (1)

75 A 5

5 hits Apply

Drain-source On Resistance-Max (2)

13.5 mΩ 3 13.7 mΩ 2

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-CBCC-N3 5

5 hits Apply

e0 2

5 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 International Rectifier 3

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

3 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 2 175.0 °C 1

Min (°C) - Max (°C)

5 hits Apply

CERAMIC, METAL-SEALED COFIRED 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

CHIP CARRIER 5

5 hits Apply

Active 2 Obsolete 2 Transferred 1

5 hits Apply

Yes 2

5 hits Apply

260 3 NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

300 W 1

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply