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IRHNA53260
Infineon Technologies AG
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 55 A | 43 mΩ | HIGH RELIABILITY | 380 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 220 A | SWITCHING | SILICON | R-CBCC-N3 | e0 | Not Qualified | DRAIN | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | TIN LEAD | NO LEAD | BOTTOM | INFINEON TECHNOLOGIES AG | HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN | unknown | EAR99 | |||||||
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IRHNA53260PBF
International Rectifier
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 55 A | 43 mΩ | HIGH RELIABILITY | 380 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 220 A | SWITCHING | SILICON | R-CBCC-N3 | Not Qualified | 150 °C | 260 | 40 | DRAIN | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | NO LEAD | BOTTOM | INTERNATIONAL RECTIFIER CORP | CHIP CARRIER, R-CBCC-N3 | compliant | EAR99 | 3 | ||||
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IRHNA53260PBF
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 55 A | 43 mΩ | HIGH RELIABILITY | 380 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 220 A | SWITCHING | SILICON | R-CBCC-N3 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | NO LEAD | BOTTOM | INFINEON TECHNOLOGIES AG | CHIP CARRIER, R-CBCC-N3 | compliant | EAR99 |