Parametric results for: irfz48nlpbf under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, HIGH RELIABILITY 1

2 hits Apply

190.0 mJ 1

2 hits Apply

DRAIN 1

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

55 V 1

2 hits Apply

Drain Current-Max (ID) (1)

64 A 1

2 hits Apply

Drain-source On Resistance-Max (1)

14 mΩ 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

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TO-262AA 1

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R-PSIP-T3 1

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e3 1

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Manufacturer (2)

Infineon Technologies AG 1 International Rectifier 1

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1 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

3 1

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ENHANCEMENT MODE 1

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175.0 °C 1

2 hits Apply

PLASTIC/EPOXY 1

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RECTANGULAR 1

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IN-LINE 1

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Active 1 Obsolete 1

2 hits Apply

Yes 1

2 hits Apply

260 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

2 hits Apply

130 W 1

2 hits Apply

Surface Mount (1)

NO 1

2 hits Apply