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1 - 10 of 12 results
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IRFU310PBF
Vishay Intertechnologies
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$0.6395 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 1.7 A | 3.6 Ω | AVALANCHE RATED | 86 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 6 A | SWITCHING | SILICON | TO-251 | R-PSIP-T3 | e3 | Not Qualified | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN | THROUGH-HOLE | SINGLE | VISHAY INTERTECHNOLOGY INC | compliant | EAR99 | Trans MOSFET N-CH 400V 1.7A IPAK | Vishay | 2024-03-12 16:05:09 | 8.8 | RoHS 2 (2015/863/EU) | 7(a) | 2015-06-15 | DRC Conflict Free | CMRT V6.31 | [object Object],[object Object],[object ... more | |||||||||||||||||
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IRFU310A
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 1.7 A | 3.6 Ω | 116 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 26 W | 6 A | SWITCHING | SILICON | R-PSIP-T3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | unknown | EAR99 | 8.8 | IN-LINE, R-PSIP-T3 | 3 | |||||||||||||||||||||||||||||
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IRFU310
Samsung Semiconductor
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE | 3 | 400 V | 1 | 1.7 A | 3.6 Ω | 60 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 25 W | 3.5 A | SWITCHING | SILICON | 49 ns | 27 ns | R-PSIP-T3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | 8.8 | IN-LINE, R-PSIP-T3 | 3 | 8541.29.00.95 | ||||||||||||||||||||||||||||
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IRFU310
Thomson Consumer Electronics
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE | 1 | 1.7 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | e0 | 150 °C | Tin/Lead (Sn/Pb) | THOMSON CONSUMER ELECTRONICS | unknown | EAR99 | 8.8 | , | ||||||||||||||||||||||||||||||||||||||||||||
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IRFU310BTU
Rochester Electronics LLC
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Check for Price | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 1.7 A | 3.4 Ω | 100 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 6 A | SWITCHING | SILICON | TO-251 | R-PSIP-T3 | e3 | COMMERCIAL | NOT APPLICABLE | NOT APPLICABLE | NOT APPLICABLE | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN | THROUGH-HOLE | SINGLE | ROCHESTER ELECTRONICS LLC | unknown | 8.8 | IPAK-3 | 3 | TO-251 | |||||||||||||||||||||||||||
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IRFU310
International Rectifier
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Check for Price | No | Transferred | N-CHANNEL | NO | SINGLE | 3 | 400 V | 1 | 1.7 A | 3.6 Ω | 86 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 25 W | 6 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e0 | Not Qualified | 1 | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | 8.8 | 2015-06-15 | DRC Conflict Free | CMRT V2.03a | IN-LINE, R-PSIP-T3 | 3 | 8541.29.00.95 | TO-251AA | ||||||||||||||||||||
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IRFU310A
Samsung Semiconductor
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Check for Price | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 1.7 A | 3.6 Ω | 116 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 26 W | 6 A | SILICON | R-PSIP-T3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | 8.8 | IN-LINE, R-PSIP-T3 | 3 | |||||||||||||||||||||||||||||||||
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IRFU310PBF
International Rectifier
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Check for Price | Yes | Transferred | N-CHANNEL | NO | SINGLE | 3 | 400 V | 1 | 1.7 A | 3.6 Ω | 86 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 6 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN OVER NICKEL | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | 8.8 | RoHS 2 (2015/863/EU) | 7(a) | 2015-06-15 | DRC Conflict Free | CMRT V2.03a | LEAD FREE, IPAK-3 | 3 | 8541.29.00.95 | TO-251AA | |||||||||||||||||||
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IRFU310BTU
Fairchild Semiconductor Corporation
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 1.7 A | 3.4 Ω | 100 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.5 W | 6 A | SWITCHING | SILICON | TO-251 | R-PSIP-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | not_compliant | EAR99 | 8.8 | RoHS 2 (2015/863/EU) | 7(a) | 2024-01-23 | DRC Conflict Free Undeterminable | Conflict Minerals Statement | [object Object],[object Object],[object ... more | IPAK-3 | 3 | TO-251 | 395 | 3476.0000000000005 | 7439-92-1 | 67 | YES | 7439-92-1, 1309-64-4 | |||||||||||||||
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IRFU310B
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 1.7 A | 3.4 Ω | 100 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.5 W | 6 A | SWITCHING | SILICON | TO-251 | R-PSIP-T3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | compliant | EAR99 | 8.8 | 2015-12-17 | IPAK-3 | 3 | TO-251 |