Parametric results for: irfn440 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 4

14 hits Apply

700.0 mJ 4

14 hits Apply

DRAIN 4

14 hits Apply

Configuration (2)

SINGLE 10 SINGLE WITH BUILT-IN DIODE 4

14 hits Apply

DS Breakdown Voltage-Min (1)

500 V 14

14 hits Apply

Drain Current-Max (ID) (2)

6.1 A 10 8 A 4

Min (A) - Max (A)

14 hits Apply

Drain-source On Resistance-Max (1)

950 mΩ 14

14 hits Apply

METAL-OXIDE SEMICONDUCTOR 14

14 hits Apply

R-CBCC-N3 4 R-XUUC-N3 10

14 hits Apply

e0 2 e4 4

14 hits Apply

Manufacturer (4)

Infineon Technologies AG 2 International Rectifier 2 TT Electronics Power and Hybrid / Semelab Limited 5 TT Electronics Resistors 5

14 hits Apply

Number of Elements (1)

1 14

14 hits Apply

Number of Terminals (1)

3 14

14 hits Apply

ENHANCEMENT MODE 14

14 hits Apply

150.0 °C 4

14 hits Apply

CERAMIC, METAL-SEALED COFIRED 4 UNSPECIFIED 10

14 hits Apply

RECTANGULAR 14

14 hits Apply

CHIP CARRIER 4 UNCASED CHIP 10

14 hits Apply

Active 12 Transferred 2

14 hits Apply

No 4 Yes 3

14 hits Apply

260 1 NOT SPECIFIED 8

14 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 14

14 hits Apply

125 W 2

14 hits Apply

75 W 2

14 hits Apply

Surface Mount (1)

YES 14

14 hits Apply