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1 - 10 of 21 results
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IRFN140R4
TT Electronics Power and Hybrid / Semelab Limited
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Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 28 A | 125 mΩ | 250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 112 A | SWITCHING | SILICON | TO-276AB | R-XBCC-N3 | e4 | Not Qualified | 150 °C | DRAIN | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | GOLD | NO LEAD | BOTTOM | SEMELAB LTD | TO-276AB | CHIP CARRIER, R-XBCC-N3 | 3 | compliant | EAR99 | ||||||||||
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IRFN140SMD-JQR-BR4
TT Electronics Resistors
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 22 A | 125 mΩ | 250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 88 A | SILICON | R-CDCC-N3 | e4 | Not Qualified | 150 °C | DRAIN | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | GOLD | NO LEAD | DUAL | TT ELECTRONICS PLC | CHIP CARRIER, R-CDCC-N3 | compliant | EAR99 | |||||||||||||||
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IRFN140PBF
International Rectifier
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 28 A | 125 mΩ | HIGH RELIABILITY | 250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 112 A | SWITCHING | SILICON | 169 ns | 166 ns | R-CBCC-N3 | Not Qualified | 150 °C | 260 | 40 | ISOLATED | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | NO LEAD | BOTTOM | INTERNATIONAL RECTIFIER CORP | CHIP CARRIER, R-CBCC-N3 | 3 | compliant | EAR99 | 8541.29.00.95 | |||||||
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IRFN140-JQR-B
TT Electronics Resistors
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Check for Price | No | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 28 A | 125 mΩ | 250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 112 A | SWITCHING | SILICON | TO-276AB | R-XBCC-N3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | NO LEAD | BOTTOM | TT ELECTRONICS PLC | CHIP CARRIER, R-XBCC-N3 | compliant | EAR99 | |||||||||||||
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IRFN140-JQR-B
TT Electronics Power and Hybrid / Semelab Limited
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Check for Price | No | No | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 28 A | 125 mΩ | 250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 112 A | SWITCHING | SILICON | TO-276AB | R-XBCC-N3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | NO LEAD | BOTTOM | SEMELAB LTD | TO-276AB | CHIP CARRIER, R-XBCC-N3 | 3 | compliant | EAR99 | ||||||||||
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IRFN140
Infineon Technologies AG
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Check for Price | No | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 28 A | 125 mΩ | HIGH RELIABILITY | 250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 75 W | 112 A | SWITCHING | SILICON | R-CBCC-N3 | e0 | Not Qualified | 150 °C | ISOLATED | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | Tin/Lead (Sn/Pb) | NO LEAD | BOTTOM | INFINEON TECHNOLOGIES AG | CHIP CARRIER, R-CBCC-N3 | not_compliant | EAR99 | ||||||||||||
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IRFN140-JQR-BR4
TT Electronics Power and Hybrid / Semelab Limited
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Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 28 A | 125 mΩ | 250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 112 A | SWITCHING | SILICON | TO-276AB | R-XBCC-N3 | e4 | Not Qualified | 150 °C | DRAIN | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | GOLD | NO LEAD | BOTTOM | SEMELAB LTD | TO-276AB | CHIP CARRIER, R-XBCC-N3 | 3 | compliant | EAR99 | ||||||||||
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IRFN140SMD-JQR-B
TT Electronics Power and Hybrid / Semelab Limited
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Check for Price | No | No | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 22 A | 125 mΩ | 250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 88 A | SILICON | R-CDCC-N3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | NO LEAD | DUAL | SEMELAB LTD | CHIP CARRIER, R-CDCC-N3 | 3 | compliant | EAR99 | |||||||||||||
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IRFN140
TT Electronics Resistors
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 28 A | 125 mΩ | 250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 112 A | SWITCHING | SILICON | TO-276AB | R-XBCC-N3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | NO LEAD | BOTTOM | TT ELECTRONICS PLC | CHIP CARRIER, R-XBCC-N3 | compliant | EAR99 | |||||||||||||
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IRFN140SM
TT Electronics Resistors
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Check for Price | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 22 A | 125 mΩ | 250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 88 A | SWITCHING | SILICON | R-CBCC-N3 | Not Qualified | DRAIN | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | NO LEAD | BOTTOM | TT ELECTRONICS PLC | CHIP CARRIER, R-CBCC-N3 | unknown | EAR99 |