Parametric results for: irfd2z0 under Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 3

5 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 3

5 hits Apply

DS Breakdown Voltage-Min (1)

200 V 3

5 hits Apply

Drain Current-Max (ID) (1)

320 mA 4

5 hits Apply

Drain-source On Resistance-Max (1)

5 Ω 3

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

5 hits Apply

R-PDIP-T3 3

5 hits Apply

e0 4

5 hits Apply

Manufacturer (5)

General Electric Solid State 1 Harris Semiconductor 1 Intersil Corporation 1 Rochester Electronics LLC 1 Thomson Consumer Electronics 1

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

3 3

5 hits Apply

ENHANCEMENT MODE 4

5 hits Apply

150.0 °C 3

5 hits Apply

PLASTIC/EPOXY 3

5 hits Apply

RECTANGULAR 3

5 hits Apply

IN-LINE 3

5 hits Apply

Active 1 Obsolete 3 Transferred 1

5 hits Apply

No 1

5 hits Apply

NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

5 hits Apply

1 W 3

5 hits Apply

Surface Mount (1)

NO 4

5 hits Apply