Parametric results for: irf9630 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 8 LEADFORM OPTIONS ARE AVAILABLE 2

78 hits Apply

260.0 mJ 1 500.0 mJ 58

Min (mJ) - Max (mJ)

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DRAIN 71

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Configuration (3)

SINGLE 60 Single 1 SINGLE WITH BUILT-IN DIODE 16

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DS Breakdown Voltage-Min (1)

200 V 74

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Drain Current-Max (Abs) (ID) (1)

6.5 A 1

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Drain Current-Max (ID) (1)

6.5 A 72

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Drain-source On Resistance-Max (1)

800 mΩ 74

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METAL-OXIDE SEMICONDUCTOR 77

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90 pF 2

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TO-220AB 60 TO-263AB 12

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R-PSFM-T3 62 R-PSSO-G2 12

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e0 36 e3 27

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Manufacturer (12)

Fairchild Semiconductor Corporation 2 Freescale Semiconductor 1 Harris Semiconductor 1 International Rectifier 53 Intersil Corporation 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 Rochester Electronics LLC 1 Samsung Semiconductor 1 Thomson Consumer Electronics 1 Vishay Intertechnologies 10 Vishay Siliconix 5

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1 4 3 1 NOT SPECIFIED 1

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Number of Elements (1)

1 76

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Number of Terminals (2)

2 12 3 62

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ENHANCEMENT MODE 77

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150.0 °C 60

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PLASTIC/EPOXY 74

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RECTANGULAR 74

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FLANGE MOUNT 62 SMALL OUTLINE 12

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Active 7 Obsolete 14 Transferred 57

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No 29 Yes 29

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225 2 250 1 260 6 NOT SPECIFIED 7

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Polarity/Channel Type (1)

P-CHANNEL 77

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74 W 45 75 W 4

Min (W) - Max (W)

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74 W 7 75 W 11

Min (W) - Max (W)

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Surface Mount (2)

NO 65 YES 12

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