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Parametric » Transistors » Power Field-Effect Transistors

Parametric results for: irf7832trpbf under Power Field-Effect Transistors

Select parts from the table below to compare.

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Select Parts		Part Number

		IRF7832TRPBF Infineon Technologies AG
		IRF7832TRPBF International Rectifier
		IRF7832TRPBF-1 International Rectifier
		IRF7832TRPBF-1 Infineon Technologies AG

				Most Relevant								Technical									Compliance				Operating Conditions					Physical						Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	DS Breakdown Voltage-Min	Number of Elements	Drain Current-Max (ID)	Drain-source On Resistance-Max	Avalanche Energy Rating (Eas)	Feedback Cap-Max (Crss)	FET Technology	Operating Mode	Power Dissipation Ambient-Max	Power Dissipation-Max (Abs)	Pulsed Drain Current-Max (IDM)	Transistor Application	Transistor Element Material	JEDEC-95 Code	JESD-30 Code	JESD-609 Code	Qualification Status	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Package Description	Reach Compliance Code	ECCN Code	HTS Code	Samacsys Manufacturer	Part Package Code	Pin Count

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

8

30 V

1

20 A

4 mΩ

260 mJ

450 pF

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

2.5 W

2.5 W

160 A

SWITCHING

SILICON

MS-012AA

R-PDSO-G8

e3

1

155 °C

-55 °C

260

30

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn)

GULL WING

DUAL

INFINEON TECHNOLOGIES AG

GREEN, SOP-8

compliant

EAR99

8541.29.00.95

Infineon

Check for Price

Yes

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

8

30 V

1

20 A

4 mΩ

260 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

2.5 W

160 A

SWITCHING

SILICON

MS-012AA

R-PDSO-G8

e3

Not Qualified

1

155 °C

260

30

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

DUAL

INTERNATIONAL RECTIFIER CORP

SOP-8

compliant

EAR99

SOIC

8

Check for Price

Yes

Transferred

INTERNATIONAL RECTIFIER CORP

,

unknown

EAR99

Check for Price

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

8

30 V

1

20 A

4 mΩ

260 mJ

450 pF

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

2.5 W

2.5 W

160 A

SWITCHING

SILICON

MS-012AA

R-PDSO-G8

e3

1

155 °C

-55 °C

260

30

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn)

GULL WING

DUAL

INFINEON TECHNOLOGIES AG

SMALL OUTLINE, R-PDSO-G8

compliant

EAR99

8541.29.00.95

Compare

Infineon Technologies AG

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

8

30 V

1

20 A

4 mΩ

260 mJ

450 pF

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

2.5 W

2.5 W

160 A

SWITCHING

SILICON

MS-012AA

R-PDSO-G8

e3

1

155 °C

-55 °C

260

30

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn)

GULL WING

DUAL

INFINEON TECHNOLOGIES AG

GREEN, SOP-8

compliant

EAR99

8541.29.00.95

Infineon

International Rectifier

Check for Price

Yes

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

8

30 V

1

20 A

4 mΩ

260 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

2.5 W

160 A

SWITCHING

SILICON

MS-012AA

R-PDSO-G8

e3

Not Qualified

1

155 °C

260

30

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

DUAL

INTERNATIONAL RECTIFIER CORP

SOP-8

compliant

EAR99

SOIC

8

International Rectifier

Check for Price

Yes

Transferred

INTERNATIONAL RECTIFIER CORP

,

unknown

EAR99

Infineon Technologies AG

Check for Price

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

8

30 V

1

20 A

4 mΩ

260 mJ

450 pF

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

2.5 W

2.5 W

160 A

SWITCHING

SILICON

MS-012AA

R-PDSO-G8

e3

1

155 °C

-55 °C

260

30

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn)

GULL WING

DUAL

INFINEON TECHNOLOGIES AG

SMALL OUTLINE, R-PDSO-G8

compliant

EAR99

8541.29.00.95