Parametric results for: irf6718l2tr1pbf under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ULTRA-LOW RESISTANCE 1

2 hits Apply

530.0 mJ 1

2 hits Apply

DRAIN 1

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

25 V 1

2 hits Apply

Drain Current-Max (ID) (1)

61 A 1

2 hits Apply

Drain-source On Resistance-Max (1)

0.7 mΩ 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

2 hits Apply

R-XBCC-N7 1

2 hits Apply

e1 1

2 hits Apply

Manufacturer (2)

Infineon Technologies AG 1 International Rectifier 1

2 hits Apply

Number of Elements (1)

1 1

2 hits Apply

Number of Terminals (1)

7 1

2 hits Apply

ENHANCEMENT MODE 1

2 hits Apply

175.0 °C 1

2 hits Apply

UNSPECIFIED 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

CHIP CARRIER 1

2 hits Apply

Active 1 Obsolete 1

2 hits Apply

Yes 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

2 hits Apply

83 W 1

2 hits Apply

Surface Mount (1)

YES 1

2 hits Apply