Parametric results for: irf353r under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

700.0 mJ 1

3 hits Apply

DRAIN 1

3 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 1

3 hits Apply

DS Breakdown Voltage-Min (1)

350 V 1

3 hits Apply

Drain Current-Max (ID) (1)

13 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

400 mΩ 1

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-204AA 1

3 hits Apply

O-MBFM-P2 1

3 hits Apply

e0 3

3 hits Apply

Manufacturer (3)

Harris Semiconductor 1 Intersil Corporation 1 Thomson Consumer Electronics 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

2 1

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

METAL 1

3 hits Apply

ROUND 1

3 hits Apply

FLANGE MOUNT 1

3 hits Apply

Obsolete 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

150 W 1

3 hits Apply

150 W 3

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply