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IPB120N06S4H1ATMA1
Infineon Technologies AG
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$1.3739 | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 120 A | 2.1 mΩ | 1060 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 480 A | SILICON | TO-263AB | R-PSSO-G2 | 1 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | compliant | EAR99 | Infineon | |||||||||||||||
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IPB120N06S4H1ATMA2
Infineon Technologies AG
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$2.7431 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 120 A | 2.1 mΩ | GREEN | 1060 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 480 A | SILICON | TO-263AB | R-PSSO-G2 | e3 | AEC-Q101 | 1 | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | Infineon | |||||||
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IPB120N06S4H1XT
Infineon Technologies AG
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Check for Price | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 120 A | 2.1 mΩ | 1060 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 480 A | SILICON | TO-263AB | R-PSSO-G2 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TO-263, 3 PIN | compliant | EAR99 | ||||||||||||||||||
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IPB120N06S4-H1
Infineon Technologies AG
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Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 120 A | 2.1 mΩ | 1060 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 250 W | 480 A | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | D2PAK | 4 |