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IPB100N04S303ATMA1
Infineon Technologies AG
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$1.1951 | Yes | End Of Life | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 40 V | 1 | 100 A | 2.8 mΩ | ULTRA LOW RESISTANCE | 898 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 A | SILICON | TO-263AB | R-PSSO-G2 | e3 | 1 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TO-263, 3 PIN | not_compliant | EAR99 | Infineon | |||||||||||||
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IPB100N06S205ATMA4
Infineon Technologies AG
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$1.3972 | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 100 A | 4.7 mΩ | 810 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 A | SILICON | TO-263AB | R-PSSO-G2 | e3 | 1 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TO-263, 3 PIN | not_compliant | EAR99 | Infineon | |||||||||||||
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IPB100N04S4H2ATMA1
Infineon Technologies AG
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$1.5588 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 40 V | 1 | 100 A | 2.4 mΩ | 280 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 A | SILICON | TO-263AB | R-PSSO-G2 | 1 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TO-263, 3 PIN | compliant | EAR99 | Infineon | |||||||||||||||||
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IPB100N06S2L05ATMA2
Infineon Technologies AG
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$2.7007 | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 100 A | 5.6 mΩ | LOGIC LEVEL COMPATIBLE | 810 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 A | SILICON | TO-263AB | R-PSSO-G2 | e3 | 1 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TO-263, 3 PIN | not_compliant | EAR99 | Infineon | ||||||||||||
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IPB100N12S305ATMA1
Infineon Technologies AG
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$2.7370 | Yes | Not Recommended | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 120 V | 1 | 100 A | 4.8 mΩ | 1445 mJ | 330 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 W | 400 A | SILICON | TO-263AB | R-PSSO-G2 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | Infineon | |||||||||
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IPB100P03P3L-04
Infineon Technologies AG
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Check for Price | Yes | Obsolete | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 30 V | 1 | 100 A | 4 mΩ | ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE | 450 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 400 A | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TO-263, 3 PIN | compliant | EAR99 | D2PAK | 4 | |||||||||
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IPB100N04S2L-03
Infineon Technologies AG
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 40 V | 1 | 100 A | 3 mΩ | AVALANCHE RATED | 810 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 W | 400 A | SILICON | TO-263AB | R-PSSO-G2 | Not Qualified | 1 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | compliant | EAR99 | D2PAK | 4 | ||||||||
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IPB100N04S2-04
Rochester Electronics LLC
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Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 40 V | 1 | 100 A | 3.3 mΩ | AVALANCHE RATED | 810 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 A | SILICON | TO-263AB | R-PSSO-G2 | e3 | COMMERCIAL | 1 | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | ROCHESTER ELECTRONICS LLC | GREEN, PLASTIC, TO-263, 3 PIN | unknown | D2PAK | 4 | |||||||||
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IPB100N08S2-07
Infineon Technologies AG
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 75 V | 1 | 100 A | 6.8 mΩ | 810 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 W | 400 A | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | Infineon | D2PAK | 4 | ||||||
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IPB100N04S2-04
Infineon Technologies AG
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Check for Price | Yes | Yes | End Of Life | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 40 V | 1 | 100 A | 3.3 mΩ | AVALANCHE RATED | 810 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 W | 400 A | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 245 | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TO-263, 3 PIN | not_compliant | EAR99 | Infineon | D2PAK | 4 |