Parametric results for: ifs100b12n3e4b under IGBTs

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration Gate-Emitter Thr Voltage-Max Gate-Emitter Voltage-Max JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ISOLATED 4

6 hits Apply

Collector Current-Max (IC) (1)

100 A 2

6 hits Apply

Collector-Emitter Voltage-Max (1)

1.2 kV 4

6 hits Apply

Configuration (1)

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR 4

6 hits Apply

Gate-Emitter Thr Voltage-Max (1)

6.4 V 1

6 hits Apply

20 V 3

6 hits Apply

R-XUFM-X34 4

6 hits Apply

Manufacturer (1)

Infineon Technologies AG 6

6 hits Apply

Number of Elements (1)

6 4

6 hits Apply

Number of Terminals (1)

34 4

6 hits Apply

150.0 °C 1 175.0 °C 2

Min (°C) - Max (°C)

6 hits Apply

-40.0 °C 1

6 hits Apply

UNSPECIFIED 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

FLANGE MOUNT 4

6 hits Apply

Active 4 Obsolete 2

6 hits Apply

No 2 Yes 1

6 hits Apply

NOT SPECIFIED 4

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

6 hits Apply

515 W 3

6 hits Apply

Surface Mount (1)

NO 4

6 hits Apply