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IDT7201LA40TDB
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 4.608 kbit | 9 | 512X9 | 5 V | 40 ns | 20 MHz | 50 ns | OTHER FIFO | RETRANSMIT | 1 | 512 | 512 words | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 900 µA | 140 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.1475 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP | THIN, CERDIP-28 | 28 | not_compliant | EAR99 | 8542.32.00.71 | ||||
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IDT7201LA40JB
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 4.608 kbit | 9 | 512X9 | 5 V | 40 ns | 50 ns | OTHER FIFO | 1 | 512 | 512 words | ASYNCHRONOUS | NO | PARALLEL | 100 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-PQCC-J32 | Not Qualified | e0 | 125 °C | -55 °C | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFJ | QCCJ, | 32 | compliant | EAR99 | 8542.32.00.71 | |||||||||
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IDT7201LA40PB
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 4.608 kbit | 9 | 512X9 | 5 V | 40 ns | 50 ns | OTHER FIFO | 1 | 512 | 512 words | ASYNCHRONOUS | NO | PARALLEL | 100 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-PDIP-T28 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 28 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.699 mm | 36.576 mm | 15.24 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP | DIP, | 28 | compliant | EAR99 | 8542.32.00.71 | ||||||||
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IDT7201LA40LB
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 4.608 kbit | 9 | 512X9 | 5 V | 40 ns | 20 MHz | 50 ns | OTHER FIFO | RETRANSMIT | 1 | 512 | 512 words | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 900 µA | 140 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CQCC-N32 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 32 | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.27 mm | QUAD | 3.048 mm | 13.97 mm | 11.43 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFJ | LCC-32 | 32 | not_compliant | EAR99 | 8542.32.00.71 | ||||
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IDT7201LA40SOB
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 4.608 kbit | 9 | 512X9 | 5 V | 40 ns | 50 ns | OTHER FIFO | 1 | 512 | 512 words | ASYNCHRONOUS | NO | PARALLEL | 100 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-PDSO-G28 | Not Qualified | e0 | 125 °C | -55 °C | 28 | PLASTIC/EPOXY | SOP | RECTANGULAR | SMALL OUTLINE | YES | TIN LEAD | GULL WING | 1.27 mm | DUAL | 3.048 mm | 18.3642 mm | 8.763 mm | INTEGRATED DEVICE TECHNOLOGY INC | SOIC | SOP, | 28 | compliant | EAR99 | 8542.32.00.71 | |||||||||
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IDT7201LA40DB
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 4.608 kbit | 9 | 512X9 | 5 V | 40 ns | 20 MHz | 50 ns | OTHER FIFO | RETRANSMIT | 1 | 512 | 512 words | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 900 µA | 140 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.1475 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP | THIN, CERDIP-28 | 28 | not_compliant | EAR99 | 8542.32.00.71 | ||||
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IDT7201LA40FB
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 4.608 kbit | 9 | 512X9 | 5 V | 40 ns | 50 ns | OTHER FIFO | 1 | 512 | 512 words | ASYNCHRONOUS | NO | PARALLEL | 140 µA | CMOS | MILITARY | R-XDFP-F28 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC | DFP | FL28,.4 | RECTANGULAR | FLATPACK | YES | Tin/Lead (Sn/Pb) | FLAT | 1.27 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | EAR99 | 8542.32.00.71 | ||||||||||||||||
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IDT7201LA40TPB
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 4.608 kbit | 9 | 512X9 | 5 V | 40 ns | 50 ns | OTHER FIFO | 1 | 512 | 512 words | ASYNCHRONOUS | NO | PARALLEL | 100 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-PDIP-T28 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 28 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.57 mm | 34.67 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP | DIP, | 28 | compliant | EAR99 | 8542.32.00.71 | ||||||||
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IDT7201LA40TCB
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 4.608 kbit | 9 | 512X9 | 5 V | 40 ns | 50 ns | OTHER FIFO | RETRANSMIT | 1 | 512 | 512 words | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 140 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP28,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | DIP | 0.300 INCH, SIDE BRAZED, THIN, CERAMIC, DIP-28 | 28 | not_compliant | EAR99 | 8542.32.00.71 | ||||||||
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IDT7201LA40LBT/R
Integrated Device Technology Inc
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Check for Price | Obsolete | 4.608 kbit | 9 | 512X9 | 5 V | 40 ns | 50 ns | RETRANSMIT | 1 | 512 | 512 words | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | R-CQCC-N32 | Not Qualified | e0 | 125 °C | -55 °C | 32 | CERAMIC, METAL-SEALED COFIRED | QCCN | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.27 mm | QUAD | 3.048 mm | 13.97 mm | 11.43 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFJ | QCCN, | 32 | unknown | EAR99 | 8542.32.00.71 |