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IDT7132LA35J8
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 35 ns | MULTI-PORT SRAM | AUTOMATIC POWER-DOWN | COMMON | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 1.5 mA | 2 V | 120 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J52 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52 | 52 | not_compliant | EAR99 | 8542.32.00.41 | ||||
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IDT7132LA35J
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 35 ns | MULTI-PORT SRAM | AUTOMATIC POWER-DOWN | COMMON | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 1.5 mA | 2 V | 120 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J52 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52 | 52 | not_compliant | EAR99 | 8542.32.00.41 | ||||
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IDT7132LA35JB
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 35 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 170 µA | 5.5 V | 4.5 V | CMOS | MILITARY | S-PQCC-J52 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 225 | MIL-PRF-38535 | 20 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, LDCC52,.8SQ | 52 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | |||
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IDT7132LA35JG
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 35 ns | MULTI-PORT SRAM | AUTOMATIC POWER DOWN | COMMON | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 1.5 mA | 2 V | 120 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J52 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 4.572 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, LDCC52,.8SQ | 52 | compliant | EAR99 | 8542.32.00.41 | ||||
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IDT7132LA35JG8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 35 ns | MULTI-PORT SRAM | AUTOMATIC POWER-DOWN | 1 | 2000 | 2.048 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J52 | Not Qualified | e3 | 70 °C | 52 | PLASTIC/EPOXY | QCCJ | SQUARE | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, | 52 | compliant | EAR99 | 8542.32.00.41 | ||||||||||||||
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IDT7132LA35JGB
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 35 ns | MULTI-PORT SRAM | AUTOMATIC POWER DOWN | COMMON | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 170 µA | 5.5 V | 4.5 V | CMOS | MILITARY | S-PQCC-J52 | Not Qualified | e3 | 1 | 125 °C | -55 °C | 260 | MIL-PRF-38535 | 30 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 4.572 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, LDCC52,.8SQ | 52 | compliant | 3A001.A.2.C | 8542.32.00.41 |