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IDT7007S55PFGI8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 55 ns | MULTI-PORT SRAM | COMMON | 2 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 4.5 V | 310 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | S-PQFP-G80 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 80 | PLASTIC/EPOXY | QFP | QFP80,.64SQ | SQUARE | FLATPACK | YES | Matte Tin (Sn) - annealed | GULL WING | 635 µm | QUAD | INTEGRATED DEVICE TECHNOLOGY INC | unknown | EAR99 | 8542.32.00.41 | ||||||||||||
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IDT7007S55PF8
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 55 ns | MULTI-PORT SRAM | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | COMMON | 1 | 2 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 15 mA | 4.5 V | 270 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQFP-G80 | Not Qualified | e0 | 3 | 70 °C | 240 | 20 | 80 | PLASTIC/EPOXY | LQFP | QFP80,.64SQ | SQUARE | FLATPACK, LOW PROFILE | YES | Tin/Lead (Sn85Pb15) | GULL WING | 650 µm | QUAD | 1.6 mm | 14 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | EAR99 | 8542.32.00.41 | QFP | 14 X 14 MM, 1.40 MM HEIGHT, TQFP-80 | 80 | ||||
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IDT7007S55PFGI
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 262.144 kbit | 8 | 32KX8 | 5 V | 55 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 4.5 V | 310 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | S-PQFP-G80 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 80 | PLASTIC/EPOXY | LQFP | QFP80,.64SQ | SQUARE | FLATPACK, LOW PROFILE | YES | Matte Tin (Sn) - annealed | GULL WING | 650 µm | QUAD | 1.6 mm | 14 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.41 | QFP | LQFP, QFP80,.64SQ | 80 | |||||
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IDT7007S55PF9
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 55 ns | MULTI-PORT SRAM | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 1 | 2 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQFP-G80 | Not Qualified | e0 | 3 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 80 | PLASTIC/EPOXY | LQFP | SQUARE | FLATPACK, LOW PROFILE | YES | Tin/Lead (Sn/Pb) | GULL WING | 650 µm | QUAD | 1.6 mm | 14 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.41 | QFP | 14 X 14 MM, 1.40 MM HEIGHT, TQFP-80 | 80 | |||||||||
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IDT7007S55PF
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 55 ns | MULTI-PORT SRAM | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | COMMON | 1 | 2 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 15 mA | 4.5 V | 270 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQFP-G80 | Not Qualified | e0 | 3 | 70 °C | 240 | 20 | 80 | PLASTIC/EPOXY | LQFP | QFP80,.64SQ | SQUARE | FLATPACK, LOW PROFILE | YES | Tin/Lead (Sn85Pb15) | GULL WING | 650 µm | QUAD | 1.6 mm | 14 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | EAR99 | 8542.32.00.41 | QFP | 14 X 14 MM, 1.40 MM HEIGHT, TQFP-80 | 80 | ||||
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IDT7007S55PFG8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 55 ns | MULTI-PORT SRAM | COMMON | 2 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 15 mA | 4.5 V | 270 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQFP-G80 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 80 | PLASTIC/EPOXY | QFP | QFP80,.64SQ | SQUARE | FLATPACK | YES | Matte Tin (Sn) - annealed | GULL WING | 635 µm | QUAD | INTEGRATED DEVICE TECHNOLOGY INC | unknown | EAR99 | 8542.32.00.41 | |||||||||||||
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IDT7007S55PFB8
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 55 ns | MULTI-PORT SRAM | COMMON | 2 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 4.5 V | 310 µA | CMOS | MILITARY | S-PQFP-G80 | Not Qualified | e0 | 3 | 125 °C | -55 °C | 240 | 38535Q/M;38534H;883B | 20 | 80 | PLASTIC/EPOXY | QFP | QFP80,.64SQ | SQUARE | FLATPACK | YES | Tin/Lead (Sn85Pb15) | GULL WING | 635 µm | QUAD | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | 3A001.A.2.C | 8542.32.00.41 | |||||||||||||
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IDT7007S55PFI
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 55 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 4.5 V | 310 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | S-PQFP-G80 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 240 | 20 | 80 | PLASTIC/EPOXY | LQFP | QFP80,.64SQ | SQUARE | FLATPACK, LOW PROFILE | YES | Tin/Lead (Sn85Pb15) | GULL WING | 650 µm | QUAD | 1.6 mm | 14 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | EAR99 | 8542.32.00.41 | QFP | 14 X 14 MM, 1.40 MM HEIGHT, TQFP-80 | 80 | |||||
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IDT7007S55PFG
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 262.144 kbit | 8 | 32KX8 | 5 V | 55 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 15 mA | 4.5 V | 270 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQFP-G80 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 80 | PLASTIC/EPOXY | LQFP | QFP80,.64SQ | SQUARE | FLATPACK, LOW PROFILE | YES | Matte Tin (Sn) - annealed | GULL WING | 650 µm | QUAD | 1.6 mm | 14 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.41 | QFP | LQFP, QFP80,.64SQ | 80 | ||||||
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IDT7007S55PFB
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 55 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 4.5 V | 310 µA | 5.5 V | 4.5 V | CMOS | MILITARY | S-PQFP-G80 | Not Qualified | e0 | 3 | 125 °C | -55 °C | 240 | MIL-PRF-38535 | 20 | 80 | PLASTIC/EPOXY | LQFP | QFP80,.64SQ | SQUARE | FLATPACK, LOW PROFILE | YES | Tin/Lead (Sn85Pb15) | GULL WING | 650 µm | QUAD | 1.6 mm | 14 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | 3A001.A.2.C | 8542.32.00.41 | QFP | LQFP, QFP80,.64SQ | 80 |