Parametric results for: hy51c4256j-80 under DRAMs

All Filters Access Time-Max I/O Type JESD-30 Code JESD-609 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Terminals Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Time-Max (1)

80 ns 1

1 hit Apply

COMMON 1

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R-PDSO-J20 1

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e0 1

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Manufacturer (1)

SK Hynix Inc 1

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Memory Density (1)

1.0486 Mbit 1

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FAST PAGE DRAM 1

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Memory Width (1)

4 1

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20 1

1 hit Apply

262.144 k 1

1 hit Apply

256000.0 1

1 hit Apply

70.0 °C 1

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0.0 °C 1

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Organization (1)

256KX4 1

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3-STATE 1

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PLASTIC/EPOXY 1

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SOJ 1

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SOJ20/26,.34 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Refresh Cycles (1)

512 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

5 V 1

1 hit Apply