Parametric results for: huf75343s3, under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 4

10 hits Apply

Configuration (2)

SINGLE 5 SINGLE WITH BUILT-IN DIODE 4

10 hits Apply

DS Breakdown Voltage-Min (1)

55 V 4

10 hits Apply

Drain Current-Max (ID) (1)

75 A 9

10 hits Apply

Drain-source On Resistance-Max (1)

9 mΩ 10

10 hits Apply

METAL-OXIDE SEMICONDUCTOR 10

10 hits Apply

TO-262AA 4 TO-263AB 6

10 hits Apply

R-PSIP-T3 4 R-PSSO-G2 6

10 hits Apply

e0 5 e3 4

10 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 4 Harris Semiconductor 3 Intersil Corporation 3

10 hits Apply

1 2

10 hits Apply

Number of Elements (1)

1 9

10 hits Apply

Number of Terminals (2)

2 6 3 4

10 hits Apply

ENHANCEMENT MODE 10

10 hits Apply

175.0 °C 9

10 hits Apply

PLASTIC/EPOXY 10

10 hits Apply

RECTANGULAR 10

10 hits Apply

IN-LINE 4 SMALL OUTLINE 6

10 hits Apply

Obsolete 6 Transferred 4

10 hits Apply

260 1

10 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 10

10 hits Apply

150 W 5 270 W 4

Min (W) - Max (W)

10 hits Apply

Surface Mount (2)

NO 4 YES 6

10 hits Apply