Parametric results for: huf75339 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 20

23 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 23

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DS Breakdown Voltage-Min (1)

55 V 23

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Drain Current-Max (ID) (2)

70 A 13 75 A 10

Min (A) - Max (A)

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Drain-source On Resistance-Max (1)

12 mΩ 23

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METAL-OXIDE SEMICONDUCTOR 23

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TO-220AB 6 TO-247 6 TO-262AA 4 TO-263AB 7

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R-PSFM-T3 12 R-PSIP-T3 4 R-PSSO-G2 7

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e0 14 e3 5

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Manufacturer (5)

Fairchild Semiconductor Corporation 7 Harris Semiconductor 5 Intersil Corporation 5 onsemi 1 Rochester Electronics LLC 5

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NOT SPECIFIED 2

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Number of Elements (1)

1 23

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Number of Terminals (2)

2 7 3 16

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ENHANCEMENT MODE 23

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175.0 °C 16

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PLASTIC/EPOXY 23

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RECTANGULAR 23

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FLANGE MOUNT 12 IN-LINE 4 SMALL OUTLINE 7

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Active 6 Obsolete 12 Transferred 5

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No 3 Yes 3

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NOT SPECIFIED 3

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Polarity/Channel Type (1)

N-CHANNEL 23

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124 W 8

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124 W 9 200 W 6

Min (W) - Max (W)

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Surface Mount (2)

NO 16 YES 7

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