Parametric results for: huf75321s3st under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 3

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

55 V 3

4 hits Apply

Drain Current-Max (ID) (1)

35 A 3

4 hits Apply

Drain-source On Resistance-Max (2)

32 mΩ 1 34 mΩ 3

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-263AB 4

4 hits Apply

R-PSSO-G2 4

4 hits Apply

e0 2 e3 1

4 hits Apply

Manufacturer (4)

Fairchild Semiconductor Corporation 1 Harris Semiconductor 1 Intersil Corporation 1 Rochester Electronics LLC 1

4 hits Apply

1 1

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

2 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

175.0 °C 2

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Active 1 Obsolete 2 Transferred 1

4 hits Apply

Yes 1

4 hits Apply

260 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

70 W 1 93 W 1

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply