Parametric results for: hn4b01je under Small Signal Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT) Collector Current-Max (IC) (1)

150 mA 2

2 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 1

2 hits Apply

Configuration (1)

COMMON EMITTER, 2 ELEMENTS 1

2 hits Apply

DC Current Gain-Min (hFE) (1)

120.0 2

2 hits Apply

R-PDSO-F5 1

2 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 2

2 hits Apply

Number of Elements (1)

2 1

2 hits Apply

Number of Terminals (1)

5 1

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

SMALL OUTLINE 1

2 hits Apply

Active 2

2 hits Apply

NOT SPECIFIED 1

2 hits Apply

Polarity/Channel Type (1)

NPN AND PNP 2

2 hits Apply

100 mW 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply

Transition Frequency-Nom (fT) (1)

80 MHz 2

2 hits Apply