Parametric results for: hn2e02f-y under Small Signal Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT) Collector Current-Max (IC) (1)

150 mA 1

1 hit Apply

Collector-Emitter Voltage-Max (1)

50 V 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

DC Current Gain-Min (hFE) (1)

120.0 1

1 hit Apply

R-PDSO-G6 1

1 hit Apply

Manufacturer (1)

Toshiba America Electronic Components 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

6 1

1 hit Apply

125.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Obsolete 1

1 hit Apply

Polarity/Channel Type (1)

NPN 1

1 hit Apply

300 mW 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply

Transition Frequency-Nom (fT) (1)

60 MHz 1

1 hit Apply