Parametric results for: hn1k06fu under Other Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

LOW THRESHOLD 1

3 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 1

3 hits Apply

DS Breakdown Voltage-Min (1)

20 V 1

3 hits Apply

Drain Current-Max (ID) (1)

100 mA 1

3 hits Apply

Drain-source On Resistance-Max (1)

6 Ω 1

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

3 hits Apply

R-PDSO-G6 1

3 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 3

3 hits Apply

Number of Elements (1)

2 1

3 hits Apply

Number of Terminals (1)

6 1

3 hits Apply

ENHANCEMENT MODE 1

3 hits Apply

PLASTIC/EPOXY 1

3 hits Apply

RECTANGULAR 1

3 hits Apply

SMALL OUTLINE 1

3 hits Apply

Active 1 Obsolete 2

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

3 hits Apply

Surface Mount (1)

YES 1

3 hits Apply