Parametric results for: hgtp2n120bn under IGBTs

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration Fall Time-Max (tf) Gate-Emitter Thr Voltage-Max Gate-Emitter Voltage-Max JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW CONDUCTION LOSS 3 LOW CONDUCTION LOSS, AVALANCHE RATED 1

6 hits Apply

COLLECTOR 4

6 hits Apply

Collector Current-Max (IC) (2)

2 A 2 12 A 4

Min (A) - Max (A)

6 hits Apply

Collector-Emitter Voltage-Max (1)

1.2 kV 6

6 hits Apply

Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN DIODE 3

6 hits Apply

130 ns 2 200 ns 2

Min (ns) - Max (ns)

6 hits Apply

Gate-Emitter Thr Voltage-Max (1)

6.8 V 2

6 hits Apply

20 V 4

6 hits Apply

TO-220AB 5

6 hits Apply

R-PSFM-T3 6

6 hits Apply

e0 4

6 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 2 Harris Semiconductor 2 Intersil Corporation 2

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 6

6 hits Apply

150.0 °C 4

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

FLANGE MOUNT 6

6 hits Apply

Obsolete 2 Transferred 4

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

104 W 4

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply