Parametric results for: hgtg20n60c3dr under IGBTs

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration Fall Time-Max (tf) Gate-Emitter Thr Voltage-Max Gate-Emitter Voltage-Max JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW CONDUCTION LOSS 1 LOW CONDUCTION LOSS, ULTRA FAST SWITCHING 2

3 hits Apply

COLLECTOR 1

3 hits Apply

Collector Current-Max (IC) (2)

40 A 2 45 A 1

Min (A) - Max (A)

3 hits Apply

Collector-Emitter Voltage-Max (1)

600 V 3

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

400 ns 2

3 hits Apply

Gate-Emitter Thr Voltage-Max (1)

7.5 V 2

3 hits Apply

20 V 2

3 hits Apply

TO-247 3

3 hits Apply

R-PSFM-T3 3

3 hits Apply

e0 2

3 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 1 Harris Semiconductor 1 Intersil Corporation 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

150.0 °C 2

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Obsolete 2 Transferred 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

164 W 2

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply