Filter Your Search
1 - 10 of 26 results
|
HCTS112K/SAMPLE
Intersil Corporation
|
Check for Price | Obsolete | 5 V | 37 ns | 2 | 2 | YES | DFP | NEGATIVE EDGE | HCT | J-K FLIP-FLOP | CMOS | COMPLEMENTARY | 5.5 V | 4.5 V | R-CDFP-F16 | Not Qualified | 16 | CERAMIC, METAL-SEALED COFIRED | FL16,.3 | RECTANGULAR | FLATPACK | FLAT | 1.27 mm | DUAL | 2.92 mm | 6.73 mm | INTERSIL CORP | DFP | DFP, | 16 | unknown | 8542.39.00.01 | ||||||||||||||||
|
5962R9573801VEC
Intersil Corporation
|
Check for Price | Obsolete | 5 V | 42 ns | 42 ns | 2 | 2 | NO | DIP | 20 MHz | 50 pF | NEGATIVE EDGE | HCT | J-K FLIP-FLOP | CMOS | 4 mA | COMPLEMENTARY | 5.5 V | 4.5 V | MILITARY | R-CDIP-T16 | Not Qualified | e4 | 125 °C | -55 °C | 38535V;38534K;883S | 100k Rad(Si) V | 16 | CERAMIC, METAL-SEALED COFIRED | DIP16,.3 | RECTANGULAR | IN-LINE | GOLD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 7.62 mm | 19.05 mm | INTERSIL CORP | DIP | DIP, DIP16,.3 | 16 | unknown | 8542.39.00.01 | ||||
|
5962R9573801VEC
Harris Semiconductor
|
Check for Price | Transferred | 5 V | 42 ns | 2 | 2 | NO | DIP | 50 pF | NEGATIVE EDGE | HCT | J-K FLIP-FLOP | CMOS | COMPLEMENTARY | 5.5 V | 4.5 V | MILITARY | R-CDIP-T16 | Not Qualified | e4 | 125 °C | -55 °C | 100k Rad(Si) V | 16 | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | IN-LINE | GOLD | THROUGH-HOLE | DUAL | HARRIS SEMICONDUCTOR | , | unknown | 8542.39.00.01 | |||||||||||||||
|
5962R9573801VXX
Intersil Corporation
|
Check for Price | Obsolete | 5 V | 42 ns | 2 | 2 | YES | DFP | NEGATIVE EDGE | HCT | J-K FLIP-FLOP | CMOS | COMPLEMENTARY | 5.5 V | 4.5 V | MILITARY | R-CDFP-F16 | Not Qualified | 125 °C | -55 °C | 100k Rad(Si) V | 16 | CERAMIC, METAL-SEALED COFIRED | FL16,.3 | RECTANGULAR | FLATPACK | FLAT | DUAL | INTERSIL CORP | , | unknown | 8542.39.00.01 | |||||||||||||||||
|
HCTS112KMSH
Intersil Corporation
|
Check for Price | No | Obsolete | 5 V | 42 ns | 2 | YES | DFP | 20 MHz | 50 pF | NEGATIVE EDGE | J-K FLIP-FLOP | CMOS | 4.8 mA | MILITARY | R-XDFP-F16 | Not Qualified | e0 | 125 °C | -55 °C | 38535V;38534K;883S | 1M Rad(Si) V | 16 | CERAMIC | FL16,.3 | RECTANGULAR | FLATPACK | Tin/Lead (Sn/Pb) | FLAT | 1.27 mm | DUAL | INTERSIL CORP | DFP, FL16,.3 | not_compliant | 8542.39.00.01 | ||||||||||||||
|
HCTS112KMSR
Harris Semiconductor
|
Check for Price | No | Transferred | 5 V | 42 ns | 42 ns | 2 | 2 | YES | DFP | 20 MHz | 50 pF | NEGATIVE EDGE | HCT | J-K FLIP-FLOP | CMOS | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHNOLOGY | 4.8 mA | COMPLEMENTARY | 5.5 V | 4.5 V | MILITARY | R-CDFP-F16 | Not Qualified | e0 | 125 °C | -55 °C | 38535V;38534K;883S | 200k Rad(Si) V | 16 | CERAMIC, METAL-SEALED COFIRED | FL16,.3 | RECTANGULAR | FLATPACK | Tin/Lead (Sn/Pb) | FLAT | 1.27 mm | DUAL | HARRIS SEMICONDUCTOR | DFP, FL16,.3 | unknown | 8542.39.00.01 | |||||||
|
HCTS112K/SAMPLE
Harris Semiconductor
|
Check for Price | Transferred | 5 V | 42 ns | 2 | 2 | YES | DFP | 50 pF | NEGATIVE EDGE | HCT | J-K FLIP-FLOP | CMOS | COMPLEMENTARY | 5.5 V | 4.5 V | R-CDFP-F16 | Not Qualified | 16 | CERAMIC, METAL-SEALED COFIRED | FL16,.3 | RECTANGULAR | FLATPACK | FLAT | DUAL | HARRIS SEMICONDUCTOR | , | unknown | 8542.39.00.01 | ||||||||||||||||||||
|
5962R9573801V9A
Intersil Corporation
|
Check for Price | Obsolete | 5 V | 42 ns | 2 | 2 | YES | DIE | NEGATIVE EDGE | HCT | J-K FLIP-FLOP | CMOS | COMPLEMENTARY | 5.5 V | 4.5 V | MILITARY | R-XUUC-N16 | Not Qualified | e0 | 125 °C | -55 °C | 100k Rad(Si) V | 16 | UNSPECIFIED | DIE OR CHIP | RECTANGULAR | UNCASED CHIP | TIN LEAD | NO LEAD | UPPER | INTERSIL CORP | DIE | DIE, | 16 | unknown | 8542.39.00.01 | |||||||||||||
|
5962R9573801VEX
Intersil Corporation
|
Check for Price | Obsolete | 5 V | 42 ns | 2 | 2 | NO | DIP | NEGATIVE EDGE | HCT | J-K FLIP-FLOP | CMOS | COMPLEMENTARY | 5.5 V | 4.5 V | MILITARY | R-CDIP-T16 | Not Qualified | 125 °C | -55 °C | 100k Rad(Si) V | 16 | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | IN-LINE | THROUGH-HOLE | DUAL | INTERSIL CORP | , | unknown | 8542.39.00.01 | ||||||||||||||||||
|
HCTS112DMSH
Harris Semiconductor
|
Check for Price | No | Obsolete | 5 V | 53 ns | 42 ns | 2 | 2 | NO | DIP | 20 MHz | 50 pF | NEGATIVE EDGE | HCT | J-K FLIP-FLOP | CMOS | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHNOLOGY | 4.8 mA | COMPLEMENTARY | 5.5 V | 4.5 V | MILITARY | R-CDIP-T16 | Not Qualified | e0 | 125 °C | -55 °C | 38535V;38534K;883S | 1M Rad(Si) V | 16 | CERAMIC, METAL-SEALED COFIRED | DIP16,.3 | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | HARRIS SEMICONDUCTOR | DIP, DIP16,.3 | unknown | 8542.39.00.01 |