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1 - 9 of 9 results
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HAF1009(S)-(1)
Renesas Electronics Corporation
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Check for Price | Obsolete | P-CHANNEL | YES | SINGLE | 1 | 40 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 50 W | 150 °C | RENESAS ELECTRONICS CORP | compliant | EAR99 | |||||||||||||||||||||||||||
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HAF1009-90L-E
Renesas Electronics Corporation
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Check for Price | Yes | Yes | Not Recommended | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 40 A | 50 mΩ | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 80 A | SWITCHING | SILICON | R-PSIP-T3 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | RENESAS ELECTRONICS CORP | compliant | EAR99 | LDPAK(L) | IN-LINE, R-PSIP-T3 | 4 | PRSS0004AE | Renesas Electronics | ||||||
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HAF1009(S)
Renesas Electronics Corporation
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Check for Price | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 40 A | 40 A | 50 mΩ | BUILT-IN THE OVER TEMPERATURE SHUT-DOWN CIRCUIT | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 50 W | 80 A | SWITCHING | SILICON | R-PSSO-G2 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | RENESAS ELECTRONICS CORP | unknown | LDPAK-3 | 3 | ||||||||||
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HAF1009L
Renesas Electronics Corporation
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Check for Price | Active | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 40 A | 50 mΩ | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 50 W | 80 A | SWITCHING | SILICON | R-PSIP-T3 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | RENESAS ELECTRONICS CORP | compliant | EAR99 | IN-LINE, R-PSIP-T3 | 3 | ||||||||||
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HAF1009(S)-(1)
Hitachi Ltd
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Check for Price | Transferred | P-CHANNEL | YES | SINGLE | 1 | 40 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 50 W | 150 °C | HITACHI LTD | unknown | EAR99 | , | ||||||||||||||||||||||||||
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HAF1009(L)
Hitachi Ltd
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Check for Price | Transferred | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 40 A | 50 mΩ | BUILT-IN THE OVER TEMPERATURE SHUT-DOWN CIRCUIT | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 50 W | 80 A | SWITCHING | SILICON | R-PSIP-T3 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | HITACHI LTD | unknown | EAR99 | IN-LINE, R-PSIP-T3 | 4 | ||||||||||
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HAF1009S
Renesas Electronics Corporation
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Check for Price | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 40 A | 50 mΩ | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 50 W | 80 A | SWITCHING | SILICON | R-PSSO-G2 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | RENESAS ELECTRONICS CORP | compliant | EAR99 | LDPAK(S)(1) | SMALL OUTLINE, R-PSSO-G2 | 4 | PRSS0004AE-B | Renesas Electronics | ||||
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HAF1009(L)
Renesas Electronics Corporation
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Check for Price | Active | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 40 A | 40 A | 50 mΩ | BUILT-IN THE OVER TEMPERATURE SHUT-DOWN CIRCUIT | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 50 W | 80 A | SWITCHING | SILICON | R-PSIP-T3 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | RENESAS ELECTRONICS CORP | unknown | IN-LINE, R-PSIP-T3 | 4 | ||||||||||
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HAF1009(S)
Hitachi Ltd
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Check for Price | Transferred | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 40 A | 50 mΩ | BUILT-IN THE OVER TEMPERATURE SHUT-DOWN CIRCUIT | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 80 A | SWITCHING | SILICON | R-PSSO-G2 | Not Qualified | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | HITACHI LTD | unknown | EAR99 | SMALL OUTLINE, R-PSSO-G2 | 3 |