Parametric results for: haf1002s under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

BUILT-IN THE OVER TEMPERATURE SHUT-DOWN CIRCUIT 2 LOGIC LEVEL COMPATIBLE 1

3 hits Apply

DRAIN 3

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

60 V 3

3 hits Apply

Drain Current-Max (ID) (1)

15 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

130 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-PSSO-G2 3

3 hits Apply

Manufacturer (2)

Hitachi Ltd 1 Renesas Electronics Corporation 2

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

2 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 2

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Not Recommended 2 Transferred 1

3 hits Apply

NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 3

3 hits Apply

50 W 2

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply