Parametric results for: fqt1n60c under Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 3

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

600 V 3

4 hits Apply

Drain Current-Max (ID) (1)

200 mA 3

4 hits Apply

Drain-source On Resistance-Max (1)

11.5 Ω 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

6 pF 3

4 hits Apply

R-PDSO-G4 4

4 hits Apply

e3 3

4 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 2 onsemi 2

4 hits Apply

1 4

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

4 4

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

150.0 °C 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Active 2 Transferred 2

4 hits Apply

Yes 2

4 hits Apply

250 3

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

2.1 W 3

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply