Parametric results for: fqb34p10tm under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

2200.0 mJ 6

6 hits Apply

DRAIN 6

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

100 V 6

6 hits Apply

Drain Current-Max (ID) (1)

33.5 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

60 mΩ 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

TO-263AB 3

6 hits Apply

R-PSSO-G2 6

6 hits Apply

e3 6

6 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 2 onsemi 3 Rochester Electronics LLC 1

6 hits Apply

1 6

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

2 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

175.0 °C 5

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

SMALL OUTLINE 6

6 hits Apply

Active 2 Obsolete 2 Transferred 2

6 hits Apply

Yes 5

6 hits Apply

245 6

6 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 6

6 hits Apply

155 W 5

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply