Parametric results for: fds8926a under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 8

8 hits Apply

DS Breakdown Voltage-Min (1)

30 V 8

8 hits Apply

Drain Current-Max (ID) (1)

5.5 A 8

8 hits Apply

Drain-source On Resistance-Max (1)

30 mΩ 8

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

110 pF 1

8 hits Apply

R-PDSO-G8 8

8 hits Apply

e3 3

8 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 6 onsemi 1 Rochester Electronics LLC 1

8 hits Apply

1 2

8 hits Apply

Number of Elements (1)

2 8

8 hits Apply

Number of Terminals (1)

8 8

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

150.0 °C 7

8 hits Apply

-55.0 °C 1

8 hits Apply

PLASTIC/EPOXY 8

8 hits Apply

RECTANGULAR 8

8 hits Apply

SMALL OUTLINE 8

8 hits Apply

Active 2 Obsolete 6

8 hits Apply

Yes 2

8 hits Apply

260 2

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

2 W 1

8 hits Apply

1.6 W 2 2 W 1

Min (W) - Max (W)

8 hits Apply

Surface Mount (1)

YES 8

8 hits Apply