Parametric results for: f-1002 under Headers and Edge Type Connectors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

BUILT-IN THE OVER TEMPERATURE SHUT-DOWN CIRCUIT 4 LOGIC LEVEL COMPATIBLE 2

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72.0 mJ 2

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DRAIN 12

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Configuration (3)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 2 SINGLE 3 SINGLE WITH BUILT-IN DIODE 12

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DS Breakdown Voltage-Min (2)

30 V 2 60 V 12

Min (V) - Max (V)

134 hits Apply

Drain Current-Max (Abs) (ID) (1)

15 A 1

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Drain Current-Max (ID) (3)

5.8 A 2 8 A 2 15 A 12

Min (A) - Max (A)

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Drain-source On Resistance-Max (2)

34 mΩ 2 130 mΩ 12

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 17

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R-PDSO-G8 2 R-PSIP-T3 5 R-PSSO-G2 7

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e0 1

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Manufacturer (8)

Hitachi Ltd 2 Joint Tech Electronic Industrial Co Ltd 116 Kodenshi Corporation 1 Kodenshi Sensing 1 Polycore Rf Devices 2 Polyfet RF Devices 1 Renesas Electronics Corporation 10 Suzhou Good-Ark Electronics Co Ltd 1

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1 2

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Number of Elements (2)

1 15 2 2

Min - Max

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Number of Terminals (3)

2 7 3 5 8 2

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ENHANCEMENT MODE 16

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85.0 °C 116 150.0 °C 11 200.0 °C 2

Min (°C) - Max (°C)

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-25.0 °C 116

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PLASTIC/EPOXY 14

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RECTANGULAR 14

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IN-LINE 5 SMALL OUTLINE 9

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Active 3 Contact Manufacturer 119 Not Recommended 6 Obsolete 3 Transferred 3

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No 2 Yes 2

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NOT SPECIFIED 4

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Polarity/Channel Type (2)

N-CHANNEL 5 P-CHANNEL 12

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3 W 2 50 W 9 80 W 2

Min (W) - Max (W)

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Surface Mount (2)

NO 7 YES 9

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