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Parametric » Diodes » Transient Suppressors

Parametric results for: esd101-b1-02els under Transient Suppressors

Select parts from the table below to compare.

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Select Parts		Part Number

		ESD101B102ELSE6327XTSA1 Infineon Technologies AG
		ESD101-B1-02ELS Infineon Technologies AG
		ESD101-B1-02ELSE6327 Infineon Technologies AG

				Most Relevant										Technical			Compliance			Operating Conditions					Physical							Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Clamping Voltage-Max	Reverse Current-Max	Diode Element Material	Diode Type	Polarity	Configuration	Surface Mount	Rep Pk Reverse Voltage-Max	Number of Elements	Technology	Additional Feature	Non-rep Peak Rev Power Dis-Max	Reverse Test Voltage	JESD-30 Code	JESD-609 Code	Reference Standard	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Number of Terminals	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Reach Compliance Code	ECCN Code	HTS Code	Samacsys Manufacturer	Package Description

Yes

Active

30 V

20 nA

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

BIDIRECTIONAL

SINGLE

YES

5.5 V

1

AVALANCHE

LOW CAPACITANCE

30 W

5.5 V

R-PBCC-N2

e4

IEC-61000-4-2, 4-4, 4-5

1

125 °C

-55 °C

260

40

2

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

Gold (Au)

NO LEAD

BOTTOM

INFINEON TECHNOLOGIES AG

compliant

EAR99

8541.10.00.50

Infineon

Check for Price

Yes

Yes

Active

30 V

20 nA

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

BIDIRECTIONAL

SINGLE

YES

5.5 V

1

AVALANCHE

LOW CAPACITANCE

30 W

5.5 V

R-PBCC-N2

e4

IEC-61000-4-2, 4-4, 4-5

1

125 °C

-55 °C

NOT SPECIFIED

NOT SPECIFIED

2

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

Gold (Au)

NO LEAD

BOTTOM

INFINEON TECHNOLOGIES AG

compliant

EAR99

8541.10.00.50

R-PBCC-N2

Check for Price

Yes

Active

30 V

20 nA

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

BIDIRECTIONAL

SINGLE

YES

5.5 V

1

AVALANCHE

LOW CAPACITANCE

30 W

5.5 V

R-PBCC-N2

IEC-61000-4-2, 4-4, 4-5

125 °C

-55 °C

2

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

GOLD

NO LEAD

BOTTOM

INFINEON TECHNOLOGIES AG

compliant

Compare

ESD101B102ELSE6327XTSA1

Infineon Technologies AG

Yes

Active

30 V

20 nA

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

BIDIRECTIONAL

SINGLE

YES

5.5 V

1

AVALANCHE

LOW CAPACITANCE

30 W

5.5 V

R-PBCC-N2

e4

IEC-61000-4-2, 4-4, 4-5

1

125 °C

-55 °C

260

40

2

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

Gold (Au)

NO LEAD

BOTTOM

INFINEON TECHNOLOGIES AG

compliant

EAR99

8541.10.00.50

Infineon

ESD101-B1-02ELS

Infineon Technologies AG

Check for Price

Yes

Yes

Active

30 V

20 nA

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

BIDIRECTIONAL

SINGLE

YES

5.5 V

1

AVALANCHE

LOW CAPACITANCE

30 W

5.5 V

R-PBCC-N2

e4

IEC-61000-4-2, 4-4, 4-5

1

125 °C

-55 °C

NOT SPECIFIED

NOT SPECIFIED

2

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

Gold (Au)

NO LEAD

BOTTOM

INFINEON TECHNOLOGIES AG

compliant

EAR99

8541.10.00.50

R-PBCC-N2

ESD101-B1-02ELSE6327

Infineon Technologies AG

Check for Price

Yes

Active

30 V

20 nA

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

BIDIRECTIONAL

SINGLE

YES

5.5 V

1

AVALANCHE

LOW CAPACITANCE

30 W

5.5 V

R-PBCC-N2

IEC-61000-4-2, 4-4, 4-5

125 °C

-55 °C

2

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

GOLD

NO LEAD

BOTTOM

INFINEON TECHNOLOGIES AG

compliant